HN1C01FE-GR,LXHF

HN1C01FE-GR,LXHF

$0.28
  • Description:TRANS 2NPN DUAL 50V 150MA ES6
  • Series:-

SKU:bd07d8e5ce99 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 150MA ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:100mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6
  • Grade:Automotive
  • Qualification:AEC-Q101

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HN1C01FE-GR,LXHF

Overview

The HN1C01FE-GR,LXHF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 150 mA. The device operates with a DC current gain (hFE) ranging from 120 to 400 at 2 mA and 6 V, and has a transition frequency (fT) of 80 MHz. Power dissipation is rated at 100 mW, with a maximum junction temperature of 150°C. It is housed in an ES-6 (SOT-563) surface-mount package and complies with AEC-Q200 automotive standards.

Feature Summary

  • Dual NPN configuration within a compact SMD package for space-constrained designs
  • Automotive-grade reliability certified under AEC-Q200 standards
  • High current gain range suitable for efficient switching applications

Applications

  • Automotive electronic control units
  • General-purpose switching circuits
  • Driver stages for low-power loads

Procurement Notes

Verify the complete part number including suffixes such as GR and LXHF to ensure correct packaging and compliance specifications. Confirm AEC-Q200 certification requirements if deploying in automotive environments. Cross-reference datasheet electrical limits against system operating conditions to prevent thermal overstress. Ensure ESD handling protocols are followed during assembly due to the small form factor.

Selection Notes

Select this component when a dual NPN configuration is required in an ES-6 package with automotive qualification. Compare power dissipation ratings against thermal management capabilities. Evaluate hFE spread for consistent switching performance. Consider alternative packages like US6 if pin compatibility differs. Verify voltage margins against peak transient loads in the target circuit.

Part Context

This part belongs to the HN1C01 series of dual BJT arrays from Toshiba. It shares core electrical characteristics with variants like HN1C01F-GR but differs in packaging and specific automotive grading. The ES-6 package distinguishes it from other series members, offering a specific footprint for PCB layout optimization in compact automotive and industrial modules.

Replacement Considerations

Direct substitutes include HN1C01F-GR,LXHF or HN1B04FE-GR,LXHF, provided polarity and package compatibility are verified. Check hFE ranges and saturation voltages for functional equivalence. Ensure replacement parts maintain AEC-Q200 certification if used in automotive systems.

HN1C01FE-GR,LXHFHN1C01FE-GR,LXHF
$0.28
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