HN1C01FE-Y,LF

Overview

The HN1C01FE-Y,LF is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in biasing resistors in an ES-6 (SOT-563) surface-mount package. The device features a collector-emitter voltage (Vceo) of 50 V and a maximum DC collector current (Ic) of 150 mA. Key electrical parameters include a gain-bandwidth product (fT) of 80 MHz and a power dissipation (Pd) of 100 mW. The DC current gain (hFE) ranges from 120 to 400 at specified test conditions.

Feature Summary

• Integrates dual NPN transistors with internal biasing resistors for simplified circuit design
• Optimized for low-voltage operation with high current gain characteristics
• Compact surface-mount packaging suitable for space-constrained applications

Applications

• General-purpose switching circuits
• Driver stages for small-signal amplification
• Logic interface level shifting

Procurement Notes

Verify the exact ordering code including suffixes such as LF or LXHF against the manufacturer's datasheet to ensure correct packaging and compliance specifications. Confirm RoHS status and moisture sensitivity levels prior to procurement. Cross-reference distributor part numbers with Toshiba Semiconductor and Storage official documentation to avoid counterfeit components.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a compact SOT-563 footprint. Ensure the 50 V Vceo rating meets the circuit's maximum voltage requirements. Verify that the 100 mW power dissipation limit is sufficient for the intended thermal environment and duty cycle.

Part Context

This part belongs to the HN1C01 series of pre-biased transistors from Toshiba Semiconductor and Storage. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The HN1C01FE variant specifically denotes the ES-6 package configuration.

Replacement Considerations

Check for pin-compatible alternatives within the same HN1C01 family, such as HN1C01FU-GR,LF, which uses a US6 package. Verify electrical equivalence regarding hFE ranges and saturation voltages before substitution.