HN1C01FU-GR,LF

Overview

The HN1C01FU-GR,LF is a dual NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It features a maximum collector current of 150 mA and a collector-emitter breakdown voltage of 50 V. The device operates with a transition frequency of 80 MHz and has a maximum power dissipation of 200 mW. DC current gain is specified at a minimum of 200 when tested at 2 mA collector current and 6 V collector-emitter voltage. The saturation voltage is limited to 250 mV under conditions of 10 mA base current and 100 mA collector current. Collector cutoff current is rated at a maximum of 100 nA. The component is housed in a US6 surface-mount package, equivalent to SC-88 or SOT-363, and supports a junction temperature up to 125°C.

Feature Summary

• Dual NPN configuration integrates two transistors within a single compact surface-mount package for space-efficient circuit design.
• High DC current gain ensures effective signal amplification and switching performance at low operating currents.
• Integrated protection against thermal overload supports reliable operation in high-density electronic assemblies.

Applications

• General-purpose switching circuits requiring dual NPN logic interfaces
• Low-voltage amplifier stages in portable consumer electronics
• Signal routing and buffering in mobile communication devices

Procurement Notes

Verify the complete part number including the suffix GR,LF to ensure correct packaging and lead-free compliance. Confirm RoHS3 status and moisture sensitivity level requirements prior to ordering. Check for alternative distributor part numbers such as HN1C01FU-GRLFTR-ND to align with specific supply chain preferences. Ensure storage conditions meet standard semiconductor handling guidelines to prevent damage before assembly.

Selection Notes

Select this component when a dual NPN configuration is required in a small outline package. The 150 mA current rating suits moderate load applications. Verify that the 80 MHz transition frequency meets the speed requirements of the target circuit. Compare the 200 mW power dissipation limit against expected thermal loads in the final enclosure design.

Part Context

This component belongs to the HN1C01 series of dual bipolar transistor arrays from Toshiba Semiconductor and Storage. The series offers various pin configurations and packaging options to accommodate different board layout constraints. The HN1C01FU-GR variant specifically utilizes the US6 footprint, providing a compact solution for modern surface-mount technology processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Toshiba cross-reference guides or authorized distributor databases for verified equivalents. Ensure any replacement matches the US6 package dimensions and electrical specifications exactly.