HN1C01FU-Y,LXHF

Overview

The HN1C01FU-Y,LXHF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It features a US-6 surface-mount package, also designated as SOT-363 or SC-88. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 150 mA. Key electrical parameters include a collector-base voltage (VCBO) of 60 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (PD) of 200 mW. The transition frequency (fT) is specified at 80 MHz, with a DC current gain (hFE) ranging from 120 to 400 at specific test conditions.

Feature Summary

• Dual NPN configuration integrated into a compact surface-mount footprint for space-constrained designs.
• Automotive-grade reliability qualification ensuring stability in demanding operational environments.
• High current gain characteristics suitable for efficient switching and amplification applications.

Applications

• Automotive electronic systems requiring AEC-Q101 qualified components.
• General-purpose signal amplification circuits.
• Digital logic interface and switching applications.

Procurement Notes

Verify the exact suffix LXHF against official Toshiba documentation to confirm packaging type and compliance status. Ensure the distributor provides valid traceability data. Cross-reference the manufacturer part number with the Mouser component ID 757-hn1c01fe-ylxhf for accurate identification during sourcing.

Selection Notes

Select this component when a dual NPN BJT array is required in a US-6 package with 50V voltage ratings. Compare the 150mA current limit and 200mW power dissipation against circuit requirements. Consider the 80MHz transition frequency for high-speed switching needs relative to alternative single-transistor solutions.

Part Context

This part belongs to the HN1C01 series of dual NPN transistors. It shares core electrical specifications with variants like HN1C01FU-GR,LF but differs in packaging and automotive qualification suffixes. The LXHF designation indicates specific manufacturing and packaging attributes defined by Toshiba Semiconductor and Storage.

Replacement Considerations

Direct substitutes include HN1C01FU-GR,LF for non-automotive applications. Verify pinout compatibility between US-6 packages before substitution. Alternative dual NPN arrays must match the 50V VCEO and 150mA IC limits.

FAQ

What is the maximum power dissipation for the HN1C01FU-Y,LXHF?

The maximum power dissipation is 200 mW.

Is this component qualified for automotive applications?

Yes, it is qualified under the AEC-Q101 standard.

What is the transition frequency of this transistor array?

The transition frequency (fT) is 80 MHz.