HN1C03F-B(TE85L,F)

Overview

The HN1C03F-B(TE85L,F) is a dual NPN epitaxial planar transistor manufactured using Toshiba's PCT process. It integrates two devices within an SM6 (Super mini type with 6 leads) surface-mount package. The component features a high emitter-base voltage of 25V minimum and a collector-emitter voltage rating of 20V. Electrical characteristics include a typical reverse DC current gain (hFE) of 150 at VCE = -2V and IC = -4mA, alongside a low on-resistance of 1Ω typical at IB = 5mA. The maximum collector current is rated at 300mA, with a total collector power dissipation of 300mW and a junction temperature limit of 150°C.

Feature Summary

• Dual NPN configuration integrated into a compact SM6 package for space-constrained designs
• High emitter-base breakdown voltage capability to withstand reverse bias conditions
• Optimized switching performance with low saturation voltage and defined transition frequency

Applications

• Muting circuits in audio equipment
• General-purpose switching applications
• Signal processing stages requiring dual complementary configurations

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba Semiconductor and Storage documentation to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS directives and export control regulations applicable to your region before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. Consider the 20V collector-emitter voltage limit and 300mA continuous current rating during circuit design. Evaluate thermal derating requirements to maintain operation within the 150°C maximum junction temperature under expected load conditions.

Part Context

This part belongs to the HN1C series of dual transistors designed for general-purpose use. It utilizes the PCT (Planar Chip Transistor) process technology to ensure stable electrical characteristics. The SM6 package provides a cost-effective solution for high-density printed circuit board layouts compared to traditional through-hole alternatives.

Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Generic replacements must match the SM6 package dimensions, 20V VCEO rating, and 300mA Ic specification to ensure mechanical and electrical compatibility without redesigning the host circuit.