HN2C01FE-GR(T5L,F)

Overview

The HN2C01FE-GR(T5L,F) is a dual NPN transistor array manufactured by Toshiba Semiconductor and Storage. This component integrates two independent NPN transistors within a single surface-mount package, designed for general-purpose switching and amplification applications. The device features low saturation voltage and high current gain characteristics suitable for digital logic interfacing and signal processing circuits. It operates with a collector-emitter voltage rating of 50V and a continuous collector current capability defined by its thermal and electrical limits. The part utilizes an SOT-363 (SC-88A) package configuration to minimize board space while maintaining reliable performance in consumer electronics and industrial control systems.

Feature Summary

• Dual NPN transistor configuration providing two independent switching channels in a compact footprint
• Low saturation voltage characteristics optimized for efficient power handling in digital circuits
• High current gain performance ensuring reliable signal amplification and logic level interfacing

Applications

• General-purpose switching in consumer electronic devices
• Digital logic interface circuits for microcontroller output expansion
• Signal amplification stages in audio and communication equipment

Procurement Notes

Verify the exact ordering code including the suffix T5L,F against official Toshiba documentation to ensure correct tape-and-reel packaging specifications. Confirm that the requested quantity matches standard reel sizes or requires special handling arrangements. Cross-reference the manufacturing date code and lot number requirements with your supply chain quality standards before finalizing purchase orders to avoid compatibility issues.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal surface-mount area. Ensure the application voltage does not exceed the 50V collector-emitter rating and that thermal dissipation constraints align with the SOT-363 package capabilities. Compare total cost of ownership against discrete alternatives considering assembly efficiency gains from integrated dual structures.

Part Context

This part belongs to Toshiba's HN2C series of dual NPN transistor arrays. The series is engineered for high-density PCB layouts common in modern portable electronics. The specific model variant indicates standardized packaging and testing parameters consistent with automotive-grade reliability expectations where applicable.

Replacement Considerations

Direct substitutes include other dual NPN transistors in SOT-363 packages such as the BC847CDW or similar equivalents from major manufacturers. Verify pinout compatibility and electrical parameter margins before substitution to maintain circuit integrity.