HN3A51F(TE85L,F)

Overview

The HN3A51F(TE85L,F) is a dual PNP bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 120V and a continuous collector current of 100mA. The device operates with a transition frequency of 100MHz and supports a maximum power dissipation of 300mW. Packaged in the surface-mount SM6 (SOT-753) configuration, it is designed for high-voltage switching applications requiring compact footprint solutions.

Feature Summary

• Dual PNP configuration within a single compact package
• High voltage capability up to 120V collector-emitter breakdown
• Surface mount design suitable for automated assembly

Applications

• High-voltage switching circuits
• Logic interface drivers
• General-purpose amplification stages

Procurement Notes

Verify component authenticity through authorized distributors. Confirm RoHS compliance status prior to integration. Ensure storage conditions meet moisture sensitivity level requirements. Check for obsolescence notices as supply chain availability may vary. Validate pinout compatibility with existing PCB footprints during procurement planning.

Selection Notes

Select this component when dual PNP isolation is required in space-constrained designs. Consider the 120V rating for high-side switching tasks. Evaluate thermal management needs given the 300mW power limit. Compare against single-transistor alternatives if only one channel is utilized. Ensure operating temperatures remain within specified junction limits.

Part Context

This part belongs to Toshiba's line of pre-biased and discrete bipolar transistor arrays. It serves as a solution for multi-channel logic interfacing where board space is limited. The SM6 package offers a balance between thermal performance and miniaturization compared to larger through-hole options.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.