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The Toshiba HN4A06J(TE85L,F) is a dual silicon PNP epitaxial planar transistor utilizing the PCT process. It features a high collector-emitter voltage of -120 V and a maximum collector current of -100 mA. The device offers a DC current gain (hFE) ranging from 200 to 700 at -2 mA, with excellent linearity. Electrical characteristics include a transition frequency of 100 MHz and a collector-emitter saturation voltage of -0.3 V. Total power dissipation is rated at 300 mW, with a junction temperature limit of 150 °C. It is housed in an SOT-25-5 package.
Verify component authenticity by checking the marking code against official Toshiba documentation. Confirm RoHS compliance status through authorized distributors or direct manufacturer channels. Ensure storage conditions remain within specified limits to maintain reliability. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing procurement specifications.
Select this component when designing circuits requiring high voltage handling up to 120 V with moderate current capabilities. The dual configuration allows for efficient use of board space in balanced amplifier designs. Consider the 300 mW total power dissipation limit and ensure adequate thermal management. Verify that the required hFE range aligns with the 200 to 700 specification for the target application.
This part belongs to the HN4A06 series of dual PNP transistors manufactured by Toshiba Semiconductor and Storage. It is designed for general-purpose amplification tasks where high voltage and stable gain are critical. The SOT-25-5 package provides a compact footprint suitable for surface-mount assembly in consumer electronics and industrial control systems.
Direct substitutes must match the -120 V rating, -100 mA current capacity, and SOT-25-5 package. Verify pinout compatibility as pin assignments may vary between manufacturers. Check if alternative components offer comparable hFE linearity and noise figures for audio applications.