HN4A51JTE85LF

Overview

The Toshiba HN4A51JTE85LF is a dual silicon PNP epitaxial planar transistor utilizing the PCT process. It features a high collector-emitter voltage of -120 V and a DC current gain (hFE) ranging from 200 to 700 at -2 mA. The device offers excellent hFE linearity with a ratio of 0.95 between -0.1 mA and -2 mA currents. Electrical characteristics include a transition frequency (fT) of 100 MHz, a noise figure of 1 dB, and a maximum collector power dissipation of 300 mW. It is housed in an SOT-25-5 surface-mount package.

Feature Summary

• High breakdown voltage capability for demanding amplifier applications
• Wide DC current gain range ensuring consistent amplification performance
• Low noise figure suitable for sensitive audio signal processing
• Excellent current gain linearity across varying collector currents

Applications

• Audio frequency general purpose amplifiers
• Low-noise pre-amplifier stages
• High-voltage switching circuits

Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape dimensions. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high voltage tolerance combined with low noise performance. Verify that the required DC current gain falls within the 200 to 700 range and that the operating temperature remains within the specified junction limits to maintain reliability.

Part Context

This part belongs to the HN4A51J series of dual PNP transistors manufactured by Toshiba Semiconductor and Storage. The series is characterized by its epitaxial planar construction and is optimized for audio and general-purpose amplification tasks requiring high voltage handling capabilities.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume functional equivalence with other dual PNP transistors without verifying pinout compatibility, voltage ratings, and electrical parameters.