HN4A56JU(TE85L,F)

Overview

The HN4A56JU(TE85L,F) is a dual PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in the USV surface-mount package. The device supports a maximum DC collector current of 150 mA with a power dissipation rating of 200 mW. Key voltage ratings include a collector-emitter voltage (VCEO) of 50 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The component features a transition frequency (fT) of 60 MHz and a collector-emitter saturation voltage of 100 mV. It operates within a temperature range up to +150°C.

Feature Summary

• Dual PNP configuration integrated into a compact surface-mount package for space-constrained designs.
• High thermal stability supporting operation at junction temperatures up to +150°C.
• Low saturation voltage characteristics suitable for efficient switching applications.

Applications

• General-purpose switching circuits requiring dual PNP logic inversion.
• Signal processing stages utilizing low-frequency amplification capabilities.
• Interface drivers in consumer electronics and industrial control systems.

Procurement Notes

Verify the complete part number including the suffix TE85L,F to ensure correct packaging and tape specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Validate that the USV package dimensions match the target PCB footprint requirements. Check for any specific handling instructions related to moisture sensitivity levels defined in the datasheet.

Selection Notes

Select this component when a dual PNP BJT configuration is required in a small outline package. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Consider the 200 mW power dissipation limit for thermal management calculations. Verify that the 60 MHz transition frequency meets the signal bandwidth requirements of the circuit design.

Part Context

This component belongs to Toshiba's series of small-signal dual transistors designed for surface-mount assembly. The HN4A56JU variant specifically provides matched PNP pairs within a single USV housing. This integration reduces board space compared to discrete components while maintaining consistent electrical characteristics between the two transistors.

Replacement Considerations

Cross-reference with other Toshiba dual PNP transistors in the USV package if availability is constrained. Verify pinout compatibility and electrical parameter overlaps before substituting with equivalent parts from other manufacturers.

FAQ

What is the maximum operating temperature for the HN4A56JU?

The maximum operating junction temperature is specified as +150°C.

Does this component contain integrated resistors?

No, the HN4A56JU is a standard dual PNP bipolar junction transistor without pre-biased internal resistors.

What is the typical collector-emitter saturation voltage?

The collector-emitter saturation voltage is specified at 100 mV under standard test conditions.