HN4B01JE(TE85L,F)

Overview

The HN4B01JE(TE85L,F) is a dual bipolar junction transistor (BJT) from Toshiba Semiconductor and Storage, integrating an NPN Q1 and a PNP Q2 in a single SMD package. The device features a maximum collector-emitter voltage of 50V for both transistors and a continuous collector current rating of 150mA. It offers a DC current gain (hFE) range of 120 to 400 at a collector current of 2mA. The transition frequency (fT) is specified at 80MHz under standard test conditions. Total power dissipation is limited to 100mW, with a maximum junction temperature of 150°C.

Feature Summary

• High voltage and high current capability with VCEO ratings of ±50V and IC ratings of ±150mA.
• High DC current gain (hFE) ranging from 120 to 400.
• Excellent hFE linearity characterized by a ratio of approximately 0.95 between low and medium current levels.

Applications

• Audio frequency general purpose amplifier circuits
• Low voltage switching applications
• General purpose amplification stages

Procurement Notes

Verify the component against the official Toshiba datasheet specifications before integration. Confirm that the application design adheres to the absolute maximum ratings, specifically the total power dissipation limit of 100mW. Ensure compliance with environmental directives such as RoHS and avoid usage in unintended high-reliability or safety-critical systems without explicit manufacturer approval.

Selection Notes

Select this component for designs requiring matched NPN/PNP pairs within a compact footprint. The ±50V voltage rating suits low-voltage logic interfacing and audio signal processing. Verify thermal management capabilities to maintain the junction temperature below 150°C, considering the 100mW total power dissipation constraint across both transistors.

Part Context

This part belongs to the HN4B series of dual transistors manufactured using Toshiba's PCT process technology. It integrates complementary silicon epitaxial transistors into a single surface-mount package, facilitating space-constrained circuit layouts while maintaining consistent electrical characteristics between the NPN and PNP elements.

Replacement Considerations

Direct substitutes include other dual BJT packages with matching pinouts and similar electrical parameters. Potential alternatives should be evaluated based on their specific hFE ranges, saturation voltages, and transition frequencies to ensure functional compatibility in existing amplifier topologies.

FAQ

What is the typical hFE linearity characteristic of the HN4B01JE?

The device exhibits excellent hFE linearity, with a typical ratio of hFE at 0.1mA to hFE at 2mA of 0.95 for both the NPN and PNP transistors.

What are the absolute maximum ratings for collector-base voltage?

The absolute maximum collector-base voltage (VCBO) is rated at 60V for the NPN transistor (Q1) and -50V for the PNP transistor (Q2).

How is the total power dissipation defined for this dual transistor?

The total collector power dissipation (PC*) is rated at 100mW. This value represents the combined heat dissipation capacity for both the NPN and PNP transistors operating simultaneously within the same package.