HN4B04J(TE85L,F)

HN4B04J(TE85L,F)

  • Description:TRANS NPN/PNP 30V 500MA SMV
  • Series:-

SKU:7ec886acde10 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP 30V 500MA SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):500mA
  • Voltage - Collector Emitter Breakdown (Max):30V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 100mA, 1V
  • Power - Max:300mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV
  • Grade:-
  • Qualification:-

Download product information

HN4B04J(TE85L,F)

Overview

The HN4B04J(TE85L,F) is a dual bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single SOT-25-5 surface-mount package. The device features a maximum collector-emitter voltage of 30 V for both polarities and a continuous collector current rating of 1.8 A for the NPN side and 2 A for the PNP side. Power dissipation is rated at 1.1 W, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

  • Dual configuration combining complementary NPN and PNP transistors in a compact footprint
  • High current handling capability suitable for power switching applications
  • Extended thermal stability supporting operation up to 150°C

Applications

  • Motor driver circuits requiring complementary push-pull stages
  • Power supply output stages
  • Logic-to-power interface drivers

Procurement Notes

Verify the specific ordering code against official Toshiba documentation to ensure correct suffix alignment. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference pin assignments with the official datasheet before PCB layout finalization to prevent orientation errors during assembly.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a small surface-mount form factor. Ensure the application voltage does not exceed the 30 V limit. Verify that the thermal management design can handle the 1.1 W power dissipation constraint under worst-case operating conditions.

Part Context

This part belongs to Toshiba's HN4B series of dual bipolar transistors. These components are designed to replace discrete transistor pairs, saving board space and simplifying assembly. The TE85L suffix indicates a tape-and-reel packaging format optimized for automated surface-mount production lines.

Replacement Considerations

Direct substitutes include other dual BJT packages with matching NPN/PNP configurations and similar voltage/current ratings. Verify pin compatibility and thermal characteristics before substitution.

HN4B04J(TE85L,F)HN4B04J(TE85L,F)

Click on the inquiry