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The HN4B04J(TE85L,F) is a dual bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single SOT-25-5 surface-mount package. The device features a maximum collector-emitter voltage of 30 V for both polarities and a continuous collector current rating of 1.8 A for the NPN side and 2 A for the PNP side. Power dissipation is rated at 1.1 W, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering code against official Toshiba documentation to ensure correct suffix alignment. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference pin assignments with the official datasheet before PCB layout finalization to prevent orientation errors during assembly.
Select this component when a matched NPN/PNP pair is required in a small surface-mount form factor. Ensure the application voltage does not exceed the 30 V limit. Verify that the thermal management design can handle the 1.1 W power dissipation constraint under worst-case operating conditions.
This part belongs to Toshiba's HN4B series of dual bipolar transistors. These components are designed to replace discrete transistor pairs, saving board space and simplifying assembly. The TE85L suffix indicates a tape-and-reel packaging format optimized for automated surface-mount production lines.
Direct substitutes include other dual BJT packages with matching NPN/PNP configurations and similar voltage/current ratings. Verify pin compatibility and thermal characteristics before substitution.