HP8K24TB

$1.65

Description：MOSFET 2N-CH 30V 15A 8HSOP
Series：-

SKU:8a9b7e23490f Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

HP8K24TB is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET 2N-CH 30V 15A 8HSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HP8K24TB

Description：MOSFET 2N-CH 30V 15A 8HSOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs：8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V, 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：590pF @ 15V, 2410pF @ 15V
Power - Max：3W (Ta)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-HSOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for HP8K24TB

HP8K24TB

FET, MOSFET Arrays Overview

The HP8K24TB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, designed for switching applications. It features a 30V drain-source voltage rating and a continuous drain current of 16A. The device exhibits a low on-resistance of 15mΩ at Vgs=4.5V and 12mΩ at Vgs=10V. Key electrical parameters include a total gate charge of 7nC, a maximum power dissipation of 26W, and an operating temperature range from -55°C to +150°C. Packaged in HSOP-8, it supports surface mount installation.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a compact HSOP-8 package
Low on-resistance optimized for efficient switching performance
Enhanced thermal stability with high maximum junction temperature capability

FET, MOSFET Arrays Applications

DC/DC converter circuits
General-purpose switching applications
Motor driver interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS directives and check for automotive qualification status if required for the target application environment.

FET, MOSFET Arrays Selection Notes

Select this component when a 30V dual N-channel MOSFET with moderate current handling is required. Compare Rds(on) values at relevant gate drive voltages against system requirements. Consider the HSOP-8 footprint constraints and thermal management needs relative to the 26W power dissipation rating.

FET, MOSFET Arrays Part Context

This part belongs to the HP8K series of middle power MOSFETs from ROHM. These devices are engineered for general-purpose use in consumer electronics and industrial equipment. The series emphasizes low on-resistance and small package size to support energy-efficient designs.