HP8KB6TB1

FET, MOSFET Arrays Overview

The HP8KB6TB1 is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source voltage (Vds) rating of 40 V and a continuous drain current (Id) of 24 A. The device exhibits a low on-resistance (Rds(on)) of 8 mΩ at Vgs = 10 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 27 nC. Thermal performance includes a power dissipation (Pd) of 26 W, with an operating temperature range from -55°C to +150°C. Switching characteristics show rise and fall times of 16 ns and 18 ns, respectively.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact HSOP-8 surface mount package for space-constrained designs.
• Low on-resistance characteristic optimized for high-efficiency switching applications.
• Enhanced thermal stability supporting operation up to +150°C junction temperature.

FET, MOSFET Arrays Applications

• General purpose switching circuits
• Motor driver interfaces
• DC-DC converter stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'TB1' against the official ROHM datasheet to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized distribution channels. Cross-reference the Mouser part number 755-HP8KB7TB1 if available documentation suggests potential listing discrepancies or variant naming conventions for this specific dual MOSFET configuration.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within an HSOP-8 footprint. The 40V rating suits low-voltage DC systems. Verify that the 24A current capacity meets load requirements under expected thermal conditions. Consider the 8mΩ Rds(on) for conduction loss calculations. Confirm compatibility with standard logic-level drive voltages if lower gate thresholds are necessary for the specific application circuit.

FET, MOSFET Arrays Part Context

This part belongs to the HP8KB series of low on-resistance MOSFETs designed for switching applications. It shares the HSOP-8 package form factor with other variants in the family, such as HP8KB5 and HP8KB7, which offer different current and resistance profiles. The series targets efficient power management in compact electronic devices requiring dual-channel control.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include HP8KB5TB1 or HP8KB7TB1 from the same manufacturer, provided their respective current ratings and on-resistance values align with the design requirements. Verify pinout compatibility and thermal characteristics before substitution.