HP8KB7TB1

FET, MOSFET Arrays Overview

The HP8KB7TB1 is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 24 A. The device exhibits a low on-resistance (Rds(on)) of 8 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 27 nC. The component supports a power dissipation (Pd) of 26 W and operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact HSOP-8 package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient switching applications.
• Enhanced thermal performance with high power dissipation capability.

FET, MOSFET Arrays Applications

• General purpose switching circuits
• Motor driver interfaces
• Power supply output stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TB1 to confirm the reel packaging quantity of 2500 units. Ensure compatibility with HSOP-8 footprint dimensions during PCB layout. Confirm RoHS compliance status through official manufacturer documentation before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required with a 40 V rating and high current handling up to 24 A. The low Rds(on) value minimizes conduction losses in high-efficiency designs. Verify that the 27 nC gate charge aligns with the driving circuit's speed requirements.

FET, MOSFET Arrays Part Context

This part belongs to the HP8KB series of dual N-channel MOSFETs from ROHM Semiconductor. The series is characterized by low on-resistance and is designed for surface-mount applications. The HP8KB7TB1 variant specifically offers higher current capacity compared to lower-numbered siblings in the same package family.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes within the same package and electrical class should be verified against official cross-reference lists. Ensure any replacement maintains the 40 V Vds, 24 A Id, and HSOP-8 form factor constraints.