FET, MOSFET Arrays HP8M31TB1 product image

HP8M31TB1

$2.61
  • Description:MOSFET N/P-CH 60V 8.5A 8HSOP
  • Series:-

SKU:9c94d4026868 Category: Brand:

  
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HP8M31TB1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N/P-CH 60V 8.5A 8HSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HP8M31TB1

  • Description:MOSFET N/P-CH 60V 8.5A 8HSOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:8.5A (Ta)
  • Rds On (Max) @ Id, Vgs:65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:12.3nC @ 10V, 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:470pF @ 30V, 2300pF @ 30V
  • Power - Max:3W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-HSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for HP8M31TB1

HP8M31TB1

FET, MOSFET Arrays Overview

The HP8M31TB1 is a complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor within a single HSOP-8 surface-mount package. The device supports a drain-source voltage of 60 V with continuous drain currents reaching 8.5 A. Key electrical parameters include on-resistances of 65 mΩ for the N-channel and 70 mΩ for the P-channel at specified gate voltages. Gate threshold voltage is typically 3 V, while total gate charges are 12.3 nC and 38 nC respectively. The component operates between -55°C and +150°C with a power dissipation rating of 7 W.

FET, MOSFET Arrays Feature Summary

  • Integrates complementary N-channel and P-channel enhancement-mode MOSFETs in a compact HSOP-8 package
  • Features low on-resistance for efficient power switching applications
  • Supports wide operating temperature range from -55°C to +150°C

FET, MOSFET Arrays Applications

  • DC/DC converter circuits
  • Load switch implementations
  • General-purpose switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm exact packaging configuration. Confirm RoHS compliance status through current datasheets as specifications may evolve. Ensure the HSOP-8 footprint matches the target PCB design constraints before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when a complementary pair is required in a minimal footprint. The 60V rating suits low-voltage systems. Compare on-resistance values against thermal requirements. Verify that the 7W power dissipation capability meets the application's thermal management strategy under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's complementary MOSFET lineup designed for space-constrained designs. It consolidates two discrete transistors into one package to reduce board area. The HSOP-8 form factor provides a balance between thermal performance and size efficiency for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Check for pin-compatible alternatives within the same ROHM series or other manufacturers offering similar 60V complementary pairs in HSOP-8 packages. Verify matching electrical characteristics such as Rds(on) and Vgs(th) to ensure circuit compatibility without redesign.

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