HSCH-5512

RF Diode Overview

The HSCH-5512 is a dual beam lead Schottky diode pair designed for microwave mixer and detector applications. It features a medium barrier construction with a minimum breakdown voltage of 4V and a maximum dynamic resistance of 16 ohms at 5mA forward current. The device exhibits a maximum total capacitance of 0.15 pF at 0V reverse bias and 1MHz frequency, with a maximum forward voltage of 500mV at 1mA. Maximum leakage current is specified at 100nA under 1V reverse bias. The component operates within a temperature range of -65°C to +175°C and supports a continuous power dissipation of 150mW.

RF Diode Feature Summary

• Monolithic pair configuration ensures closely matched electrical parameters between the two diodes.
• Platinum tri-metal system provides high temperature stability and reliable performance.
• Silicon nitride passivation layer offers immunity from contaminants that could cause infrared drift.
• Rugged construction includes polyimide scratch protection and a minimum lead pull strength of 4 grams.

RF Diode Applications

• Balanced mixers and even harmonic anti-parallel pair mixers
• Bridge quads, star quads, and ring quads for Class I, II, or III double balanced mixers
• Stripline, microstrip, or coplanar waveguide circuits

RF Diode Procurement Notes

Verify the specific manufacturer source, as Broadcom Limited acquired Avago Technologies which originally produced this series. Confirm availability status, as older HSCH-55xx components may be discontinued or subject to obsolescence notices. Ensure handling procedures account for ESD sensitivity during procurement and storage.

RF Diode Selection Notes

Select the HSCH-5512 when a medium barrier characteristic is required for mixer applications, distinguishing it from the low barrier HSCH-5531 variant. Evaluate the 4V breakdown voltage and 16-ohm dynamic resistance against circuit requirements. Consider the 0.15 pF maximum capacitance for K-band frequency operations where low parasitic effects are critical.

RF Diode Part Context

The HSCH-5512 belongs to the HSCH-55XX series of beam lead Schottky diodes manufactured by Avago Technologies (now part of Broadcom Limited). This series utilizes advanced epitaxial techniques and precise process control to ensure uniformity in planar passivated microwave semiconductor devices.

RF Diode Replacement Considerations

The HSCH-5531 is an alternative within the same series but features a low barrier construction with different electrical specifications, including a higher breakdown voltage and lower dynamic resistance. Verify if the medium barrier characteristics of the HSCH-5512 are strictly necessary for the intended application before substituting.

RF Diode FAQ

What is the typical noise figure of the HSCH-5512?

The typical noise figure is 7.5 dB at 26 GHz.

How should the HSCH-5512 be bonded during assembly?

Thermocompression bonding is recommended. Welding or conductive epoxy may also be used.

What is the maximum operating temperature for the HSCH-5512?

The maximum operating temperature is +175 °C.