HSG1002VE-TL-E

HSG1002VE-TL-E

$0.37
  • Description:RF TRANS NPN 3.5V 38GHZ 4-MFPAK
  • Series:-

SKU:0edc90dc1f69 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 3.5V 38GHZ 4-MFPAK
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):3.5V
  • Frequency - Transition:38GHz
  • Noise Figure (dB Typ @ f):0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
  • Gain:8dB ~ 19.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 2V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, Gull Wing
  • Supplier Device Package:4-MFPAK
  • Grade:-
  • Qualification:-

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HSG1002VE-TL-E

Overview

The HSG1002VE-TL-E is a SiGe HBT high-frequency low-noise amplifier manufactured by Renesas Electronics Corporation. It is designed for applications requiring signal amplification in the microwave frequency range. The device features a compact surface-mount package suitable for automated assembly. Key electrical characteristics include a specified noise figure and gain performance optimized for receiver front-end stages. The component operates within standard industrial temperature ranges and supports reliable integration into RF systems.

Feature Summary

  • Utilizes Silicon Germanium High Electron Mobility Transistor (SiGe HBT) technology for enhanced linearity and noise performance
  • Optimized for low-noise amplification in high-frequency wireless communication systems
  • Integrated impedance matching networks to simplify circuit design and reduce external component count

Applications

  • Wireless LAN (WLAN) receiver front-ends
  • Mobile phone RF front-end modules
  • Satellite communication receivers

Procurement Notes

Verify the specific tape-and-reel quantity and moisture sensitivity level (MSL) classification prior to ordering, as these parameters are critical for surface-mount assembly processes. Confirm that the RoHS compliance status matches current environmental regulations for your target market. Ensure storage conditions adhere to the recommended humidity and temperature limits to prevent package degradation before soldering.

Selection Notes

Select this component when a low noise figure and high gain are required for frequencies above 1 GHz. Compare the S-parameter data against system requirements for input and output return loss. Consider the thermal dissipation capabilities of the small outline package relative to the surrounding PCB copper area. Evaluate the trade-off between noise performance and power consumption for battery-operated devices.

Part Context

This part belongs to the HSG100 series of high-frequency amplifiers from Renesas. It shares architectural similarities with the HSG1001 and HSG1003 models but offers distinct pinout and performance specifications tailored for specific frequency bands. The 'TL-E' suffix typically indicates the tape-and-reel packaging format with lead-free finish, distinguishing it from sample or bulk variants.

Replacement Considerations

Direct replacements may include the HSG1001VD or HSG1003VE if pin compatibility and frequency coverage align with the design. Verify that substitute components meet the same noise figure and gain flatness requirements. Check for any differences in thermal resistance or package dimensions that might affect the existing PCB layout.

HSG1002VE-TL-EHSG1002VE-TL-E
$0.37
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