HSMP-3833-BLKG

RF Diode Overview

The HSMP-3833-BLKG is a general-purpose PIN diode from the HSMP-383x series, manufactured by Broadcom Limited. It features a single-diode configuration housed in an SOT-23 surface-mount package with three leads. The device has a breakdown voltage of 200 V and a maximum series resistance of 1.5 Ω at a forward current of 100 mA. Total capacitance is specified as 0.3 pF at 1 MHz with 50 V reverse bias. Typical parameters include a carrier lifetime of 500 ns and a reverse recovery time of 80 ns. It operates within a temperature range of -65 °C to +150 °C.

RF Diode Feature Summary

• Optimized for low capacitance switching applications
• Designed for low current attenuator circuits
• Low failure in time (FIT) rate
• Lead-free construction

RF Diode Applications

• Low capacitance RF switches
• Low current attenuators
• SPDT switch configurations
• High isolation SPST switches

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format. The BLKG suffix indicates bulk packaging. Confirm RoHS compliance status through the manufacturer's latest datasheet or component certification documents before finalizing procurement specifications.

RF Diode Selection Notes

Select this component when guaranteed performance metrics are required over typical values found in other series. Ensure the 200 V breakdown voltage meets circuit requirements. Verify that the 0.3 pF total capacitance aligns with high-frequency design constraints. Check thermal dissipation limits relative to the operating environment.

RF Diode Part Context

This part belongs to the HSMP-383x series of surface mount RF PIN diodes. The series includes single and dual versions optimized for attenuator and switch applications. The HSMP-3833 variant specifically provides a common anode configuration within the SOT-23 package outline.

RF Diode Replacement Considerations

Consult the manufacturer's datasheet for direct cross-reference information. Verify pinout compatibility and electrical parameter equivalence for any substitute components.