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HSMP-3880-BLKG is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE PIN 100V 250MW SOT-23-3. Review the specifications below when checking this part for your BOM.
RF Diode specifications for HSMP-3880-BLKG
- Description：RF DIODE PIN 100V 250MW SOT-23-3
- Series：-
- Mfr：Broadcom Limited
- Package：Bulk
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：100V
- Current - Max：1:00 AM
- Capacitance @ Vr, F：0.3pF @ 50V, 100MHz
- Resistance @ If, F：3.8Ohm @ 1mA, 100MHz
- Power Dissipation (Max)：250 mW
- Operating Temperature：150°C (TJ)
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
RF Diode datasheet and documents for HSMP-3880-BLKG
RF Diode Overview
The HSMP-3880-BLKG is a single PIN diode in an SOT-23 package, optimized for ultra-low distortion switching up to 1.5 GHz. It features a maximum breakdown voltage of 100 V and a typical carrier lifetime of 2500 ns. Electrical specifications include a maximum shunt capacitance of 0.40 pF at 50 V reverse bias and a maximum series resistance of 6.5 Ω at 5 mA forward current. The device supports a total power dissipation of 250 mW and operates within a temperature range of -65 °C to +150 °C.
RF Diode Feature Summary
- Ultra-low distortion performance suitable for higher power RF applications
- Optimized for switching operations with extended carrier lifetime
- Surface mount construction in a compact SOT-23 package
RF Diode Applications
- RF switching circuits operating up to 1.5 GHz
- Attenuator configurations requiring low harmonic distortion
- High-power signal routing in communication systems
RF Diode Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging orientation and quantity. Confirm lead-free status if required by compliance standards. Ensure the component matches the exact Agilent/Broadcom part number to avoid functional discrepancies due to variant differences.
RF Diode Selection Notes
Select this component when system requirements demand high linearity and low intermodulation distortion in RF paths. The 2500 ns carrier lifetime supports lower frequency operation compared to faster variants. Verify that the 100 V breakdown rating aligns with peak inverse voltage conditions in the target circuit design.
RF Diode Part Context
This component belongs to the HSMP-3880 family of surface mount PIN diodes originally manufactured by Agilent Technologies. Broadcom Limited acquired the semiconductor division responsible for these products. The datasheet identifies it as a specialized device for linear RF switching rather than general-purpose rectification.
RF Diode Replacement Considerations
HSMP-3880-G (Lead-free version)
RF Diode FAQ
What is the typical carrier lifetime for the HSMP-3880?
The typical carrier lifetime is 2500 ns at a forward current of 50 mA.
What is the maximum second harmonic distortion specification?
The maximum second harmonic distortion is -55 dBc at 400 MHz with +30 dBm input power.
Is a SPICE model available for simulation?
No, a SPICE model is not available because standard SPICE does not account for carrier lifetime characteristics essential to PIN diode behavior.
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