SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
HSMP-389Y-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE PIN 100V SOD-323. Review the specifications below when checking this part for your BOM.
The HSMP-389Y-TR1G is a surface-mount RF switching PIN diode manufactured by Broadcom Limited, housed in an SOD-523 package. It features a minimum breakdown voltage of 100 V and a maximum total capacitance of 0.30 pF at 1 MHz reverse bias. The device exhibits a maximum total resistance of 2.5 Ω at 100 mA forward current and a typical carrier lifetime of 200 ns. Absolute maximum ratings include a peak inverse voltage of 100 V, a junction temperature limit of 150°C, and a storage temperature range from -60°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and container type. The TR1G suffix indicates a 7-inch reel containing 3000 units. Ensure compliance with RoHS standards and lead-free requirements as specified in the datasheet before procurement.
Select this component when system design demands a miniature SOD-523 form factor combined with high isolation characteristics. The 100 V breakdown voltage supports moderate reverse bias applications, while the 200 ns carrier lifetime suits high-speed switching frequencies above the cutoff threshold.
This part belongs to the Avago Technologies HSMP-389 series of surface mount RF PIN diodes. The series includes various configurations optimized for different switching speeds and power handling capabilities within compact packages suitable for modern electronic assemblies.
Direct substitutes within the same family include HSMP-389B, HSMP-389C, HSMP-389E, HSMP-389F, HSMP-389L, and HSMP-389T. Verify electrical parameters such as carrier lifetime and breakdown voltage match system requirements when cross-referencing these alternatives.
No, a SPICE model is not available because standard SPICE simulations do not account for the critical PIN diode characteristic of carrier lifetime.
The typical carrier lifetime is 200 ns, measured under conditions of 10 mA forward current and 6 mA reverse current.
The RF resistance decreases as the forward bias current increases, dropping significantly from approximately 3.8 Ω at 1 mA to lower values at higher currents like 10 mA.
Explore related parts through Diodes, Discrete Semiconductor Products, all product categories, ChipApex homepage.