HSMS-2810-BLKG

RF Diode Overview

The HSMS-2810-BLKG is a surface mount RF Schottky barrier diode from the HSMS-281x series, manufactured by Broadcom Limited. It features a single diode configuration housed in an SOT-23 package with lead code B0. Key electrical specifications include a maximum breakdown voltage of 20 V, a typical forward voltage of 400 mV at 1 mA forward current, and a reverse leakage current of 200 nA at 5 V reverse bias. The device exhibits a typical capacitance of 15 pF at 0 V and a dynamic resistance of 15 Ω at 5 mA. It operates within a junction temperature range of -65°C to 150°C.

RF Diode Feature Summary

• Designed for analog and digital applications with very low flicker (1/f) noise characteristics.
• Manufactured using techniques that ensure high matching degrees for dice found in pairs and quads.

RF Diode Applications

• Analog signal processing circuits
• Digital switching applications
• RF mixer designs requiring low noise performance

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may vary. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly.

RF Diode Selection Notes

Select this component when low flicker noise is critical for the application. Compare SPICE parameters against HSMS-280x and HSMS-282x families to determine if the hybrid Schottky characteristics offer the optimal balance between breakdown voltage and series resistance for the specific circuit design.

RF Diode Part Context

This part belongs to the HSMS-281x family of surface mount RF Schottky barrier diodes. The series provides designers with flexibility through various package configurations and internal diode arrangements, including single, dual, and quad versions, all sharing similar low-noise manufacturing processes.

RF Diode Replacement Considerations

Direct substitutes within the same series include HSMS-281B-BLK (Single), HSMS-281C-BLK (Series), and HSMS-281F-BLK (Common Cathode). Verify pinout compatibility and electrical parameter alignment before substitution.

RF Diode FAQ

What is the effective carrier lifetime for the HSMS-281x series?

The effective carrier lifetime is 100 ps maximum, measured with the Krakauer method at 5 mA.

How is the dynamic resistance defined for this component?

Dynamic resistance (RD) is defined as RS + 5.2 Ω at 25°C and If = 5 mA.

What is the maximum forward voltage difference for diodes in pairs?

The delta VF for diodes in pairs is 15 mV maximum at 1 mA.