HSMS-2813-BLKG

RF Diode Overview

The HSMS-2813-BLKG is a surface-mount RF Schottky barrier diode from the Broadcom HSMS-281x series, configured as a dual common anode device. It utilizes silicon technology and is available in SOT-23, SOT-143, SOT-323, or SOT-363 packages. The component features a maximum repetitive peak reverse voltage of 20 V and a forward current rating of 1 A. Electrical characteristics include a typical forward voltage of 400 mV at 1 mA, a leakage current of 200 nA at 20 V, and a junction capacitance of 1.2 pF at 0 V. It operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

• Designed for analog and digital applications with very low flicker (1/f) noise performance.
• Manufactured using techniques that ensure high matching accuracy between paired or quad devices on the same wafer.
• Offers six-sigma quality levels and low failure in time rates for reliable operation.

RF Diode Applications

• Low-noise signal processing circuits
• RF detection and mixing applications
• High-isolation switching configurations

RF Diode Procurement Notes

Verify the specific package variant required, as the HSMS-281x series spans multiple footprint types including SOT-23, SOT-143, SOT-323, and SOT-363. Confirm lead-free status if necessary, as ordering suffixes such as 'G' denote lead-free options. Ensure compatibility with automated assembly profiles, noting that maximum reflow temperatures should not exceed 235°C to prevent thermal damage.

RF Diode Selection Notes

Select this component when low flicker noise is critical compared to other Schottky families like the HSMS-282x. The HSMS-281x series provides a hybrid balance, offering lower noise than standard RF diodes while maintaining reasonable breakdown voltages. Choose based on the required configuration; the '3' designation specifically indicates a common anode arrangement suitable for differential or bridge topologies.

RF Diode Part Context

This part belongs to the HSMS-281x family of surface mount RF Schottky diodes manufactured by Broadcom Limited. The series includes single, dual, and quad versions with various internal configurations such as ring, bridge, and unconnected pairs. These diodes are engineered for high reliability and consistent electrical matching across adjacent devices on the manufacturing wafer.

RF Diode Replacement Considerations

Direct substitutes within the same series include HSMS-2810 through HSMS-2818, HSMS-281B, HSMS-281C, HSMS-281E, HSMS-281F, HSMS-281K, and HSMS-281L. Selection depends on matching the specific internal configuration (e.g., common cathode vs. common anode) and the required package outline (SOT-23, SOT-143, etc.).

RF Diode FAQ

What is the maximum dynamic resistance for the HSMS-2813?

The typical dynamic resistance is 15 ohms at a forward current of 5 mA and a frequency of 1 MHz.

How is the effective carrier lifetime defined for this device?

The effective carrier lifetime is specified as a maximum of 100 ps, measured using the Krakauer method at 5 mA.

What is the maximum allowed temperature difference for matched pairs?

For diodes in pairs, the forward voltage difference (∆VF) must be a maximum of 15 mV at 1 mA.