HSMS-2823-TR2G

RF Diode Overview

The HSMS-2823-TR2G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a common anode configuration within a SOT-143 package, marked with code C3. The device operates with a maximum peak inverse voltage of 15 V and a forward current rating of 1 A under pulse conditions. Key electrical specifications include a typical forward voltage of 340 mV at 0.5 mA, a maximum reverse leakage of 10 nA at 15 V, and a capacitance of 1 pF at 0 V. Dynamic resistance is typically 12 ohms at 5 mA. The component supports junction temperatures up to 150°C and storage temperatures from -65°C to 150°C.

RF Diode Feature Summary

• Common anode dual-diode configuration for balanced circuit applications
• Low turn-on voltage characteristics optimized for RF signal processing
• Matched diode pairs fabricated from adjacent wafer sites for consistent performance
• Surface mount design in compact SOT-143 package for board space efficiency

RF Diode Applications

• Double balanced mixers operating up to 6 GHz
• DC biased small signal detectors below 1.5 GHz
• Large signal detectors for AGC or power monitoring up to 4 GHz
• Frequency multipliers in RF front-end circuits

RF Diode Procurement Notes

Verify the specific suffix TR2G against the manufacturer's current datasheet to confirm packaging details and RoHS compliance status. Ensure the sourcing channel provides valid traceability documentation for this discontinued Agilent/Broadcom part number. Cross-reference the marking code C3 with official package identification guides to prevent substitution errors during assembly.

RF Diode Selection Notes

Select this component when a matched common anode pair is required for mixer or detector topologies. The SOT-143 package offers higher thermal conductivity compared to standard SOT-23 devices. Consider the 15 V breakdown voltage and low capacitance for high-frequency isolation requirements. Verify that the 12 ohm dynamic resistance meets the conversion loss specifications of the target mixer circuit.

RF Diode Part Context

This part belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes originally developed by Agilent Technologies and later transferred to Broadcom Limited. The family includes various configurations such as single, series, bridge quad, and ring quad diodes. The HSMS-2823 specifically utilizes the common anode layout, distinguishing it from the common cathode HSMS-2824 and series HSMS-2822 variants within the same package outline.

RF Diode Replacement Considerations

Direct replacements include other members of the HSMS-282x family with compatible pinouts, such as HSMS-2822 (Series) or HSMS-2824 (Common Cathode), provided the circuit topology supports the configuration change. Generic Schottky diodes with similar 15 V PIV and <1 pF capacitance may serve as functional substitutes if matching requirements are relaxed.