HSMS-282F-BLKG

RF Diode Overview

The HSMS-282F-BLKG is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited, belonging to the HSMS-282x series. It features a Common Cathode configuration within an SOT-323 (SC-70) package. The device utilizes silicon technology and is optimized for analog and digital applications requiring low series resistance and low forward voltage. Key electrical specifications include a breakdown voltage of 15 V, a maximum forward voltage of 340 mV at 0.5 mA, and a reverse leakage current of 100 nA at 10 V. The junction capacitance is typically 1 pF at 0 V, with a dynamic resistance of 12 Ω at 5 mA. It operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

• Low turn-on voltage characteristics suitable for efficient signal detection
• High degree of matching between diodes in pairs and quads due to adjacent wafer site manufacturing
• Enhanced thermal conductivity provided by copper leadframe in SOT-323/SOT-363 packages
• Six-sigma quality level ensuring consistent performance across lots

RF Diode Applications

• DC biased small signal detectors up to 1.5 GHz
• Biased or unbiased large signal detectors for AGC or power monitoring up to 4 GHz
• Mixers and frequency multipliers operating up to 6 GHz
• Sampling, clamping, and wave shaping circuits

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for End-of-Life notifications as availability may be restricted. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during assembly.

RF Diode Selection Notes

Select this part when a common cathode configuration is required for RF mixing or detection tasks. The SOT-323 package offers a compact footprint compared to larger SOT-143 options while maintaining robust thermal dissipation. Consider the 15 V breakdown voltage limit for high-voltage applications where other series variants might be more appropriate.

RF Diode Part Context

This component is part of the broader HSMS-282x family of surface mount RF Schottky diodes originally developed by Agilent Technologies and now produced by Broadcom Limited. The family provides various internal configurations including single, dual, and quad arrangements to offer designers flexibility in circuit topology without changing the underlying diode chip technology.

RF Diode Replacement Considerations

Direct substitutes within the same series include HSMS-282E-BLKG (Common Anode) and HSMS-282C-BLKG (Series). For identical Common Cathode functionality in different packages, consider HSMS-282F-TR1 or HSMS-282B if pinout compatibility allows.