RF Diode HSMS-282F-TR1G product image

HSMS-282F-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-323
  • Series:-

SKU:f5429749af12 Category: Brand:

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HSMS-282F-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 15V SOT-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-282F-TR1G

  • Description:RF DIODE SCHOTTKY 15V SOT-323
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:12Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

RF Diode datasheet and documents for HSMS-282F-TR1G

HSMS-282F-TR1G

RF Diode Overview

The HSMS-282F-TR1G is a surface mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a dual anode common cathode configuration housed in a SOT-323-3 package. The device utilizes silicon technology and supports SMD/SMT installation. Key electrical specifications include a maximum repetitive reverse voltage of 15 V, a forward current rating of 1 A, and a typical forward voltage of 340 mV at 1 mA. Reverse leakage current is specified at 100 nA, with a junction capacitance of 1 pF. The component operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Low turn-on voltage for efficient signal detection
  • Matched diodes for consistent performance in pairs
  • Six-sigma quality level with low failure rate
  • Unique configurations in surface mount packages

RF Diode Applications

  • Mixing applications up to 6 GHz
  • Detecting small and large signals
  • Switching and sampling circuits
  • Clamping and wave shaping

RF Diode Procurement Notes

Verify the specific suffix TR1G corresponds to tape and reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Check for product change notices or end-of-life notifications that may affect long-term availability. Ensure the supplier provides valid traceability data for the silicon die origin.

RF Diode Selection Notes

Select this component for designs requiring a dual anode common cathode topology in a compact SOT-323 footprint. Consider the 15 V breakdown voltage limit for high-voltage applications where other series members might be more suitable. Evaluate thermal resistance requirements as the SOT-323 package offers different dissipation characteristics compared to larger SOT-143 variants.

RF Diode Part Context

This part belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes originally developed by Agilent Technologies. The family is characterized by low series resistance and good RF performance across various package configurations. Broadcom Limited continues to manufacture these components following its acquisition of the semiconductor division.

RF Diode Replacement Considerations

Direct substitutes within the same family include HSMS-282C (Series) and HSMS-282E (Common Anode). For identical pinout and function, verify compatibility with other HSMS-282F variants from different manufacturers if available.

HSMS-282F-TR1GHSMS-282F-TR1G

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