HSMS-2860-TR1G

RF Diode Overview

The HSMS-2860-TR1G is a single silicon microwave Schottky detector diode in an SOT-23 package. It operates from 915 MHz to 5.8 GHz with a typical forward voltage of 250 mV at 1 mA and maximum capacitance of 0.3 pF. Peak inverse voltage is 4.0 V, junction temperature reaches 150 °C, and storage range spans -65 °C to +150 °C.

RF Diode Feature Summary

• Optimized for RF/ID and RFID tag applications across UHF to C-band frequencies
• High detection sensitivity with low tangential signal performance
• Miniature surface mount packaging for board space efficiency
• Matched diodes from adjacent wafer sites ensure consistent electrical characteristics

RF Diode Applications

• RFID and RF Tag systems
• Large signal detection circuits
• RF to DC conversion modules
• Voltage doubling rectifiers

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and check for product change notifications regarding manufacturing origin or material composition updates prior to finalizing procurement orders.

RF Diode Selection Notes

Select this single-diode configuration when circuit topology requires isolated detection elements. Evaluate thermal resistance requirements against expected power dissipation levels. Ensure bias current selection aligns with desired video impedance and sensitivity targets for the specific operating frequency band.

RF Diode Part Context

This component belongs to the HSMS-286x family of surface mount microwave Schottky detector diodes manufactured by Broadcom Limited. The series provides various package options including SOT-23, SOT-143, SOT-323, and SOT-363 to accommodate different design constraints and isolation requirements.

RF Diode Replacement Considerations

HSMS-286B-TR1G serves as a direct functional substitute within the same family, offering identical electrical specifications but housed in a miniature SOT-323 package rather than the standard SOT-23 form factor.