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HSMS-2864-TR1G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 4V SOT-23-3. Review the specifications below when checking this part for your BOM.
The HSMS-2864-TR1G is a surface mount microwave Schottky detector diode from the Broadcom HSMS-286x family, housed in an SOT-143 package. It features a common cathode configuration with two matched diodes. Key electrical specifications include a typical forward voltage of 250 mV (max 350 mV) at 1.0 mA and a typical capacitance of 0.30 pF at 0 V reverse bias and 1 MHz. The device operates within a frequency range of 915 MHz to 5.8 GHz, offering tangential sensitivity of -57 dBm at 915 MHz and voltage sensitivities up to 50 mV/µW at 915 MHz, 35 mV/µW at 2.45 GHz, and 25 mV/µW at 5.80 GHz. Absolute maximum ratings specify a peak inverse voltage of 4.0 V and a junction temperature limit of 150°C.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead-free compliance and tape-and-reel packaging details. Ensure the component matches the required SOT-143 footprint and common cathode pinout for your circuit design.
Select this part when a common cathode arrangement is required for differential detection or voltage doubling topologies. Consider the thermal resistance characteristics of the SOT-143 package if high power dissipation is anticipated, as copper leadframes in smaller packages offer better thermal conductivity.
This component belongs to the HSMS-286x series of surface mount microwave Schottky detector diodes. The series includes various configurations such as single diodes, series pairs, and unconnected pairs in SOT-23, SOT-143, SOT-323, and SOT-363 packages to address different isolation and matching requirements.
HSMS-286B-TR1G
The HSMS-2864 features a common cathode configuration, making it suitable for differential detector circuits or voltage doublers where matched diodes are needed.
The typical capacitance is 0.30 pF, measured at 0 V reverse bias and 1 MHz frequency.
It provides typical voltage sensitivities of 50 mV/µW at 915 MHz, 35 mV/µW at 2.45 GHz, and 25 mV/µW at 5.80 GHz under specified test conditions.
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