HSMS-286K-TR1

RF Diode Overview

The HSMS-286K-TR1 is a surface mount microwave Schottky detector diode from the HSMS-286x series, manufactured by Broadcom Limited. It is housed in a SOT-363 (SC-70 6 lead) package and configured as a high isolation unconnected pair. The device operates optimally within the 915 MHz to 5.8 GHz frequency range. Key electrical specifications include a peak inverse voltage of 4.0 V, a typical forward voltage of 250 mV with a maximum of 350 mV at 1.0 mA, and a junction capacitance of 0.25 pF at 0 V bias. Thermal resistance from junction to case is rated at 150 °C/W, supporting a maximum operating temperature of 150 °C.

RF Diode Feature Summary

• High isolation configuration achieved through grounded center leads, providing up to 10 dB higher isolation compared to standard pairs.

RF Diode Applications

• RFID tag circuits
• Differential detector configurations requiring high isolation

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm tape and reel packaging details. Ensure the component meets RoHS compliance requirements for the intended market. Cross-reference the datasheet revision date to validate that all electrical parameters and thermal ratings remain consistent with the version used during design validation.

RF Diode Selection Notes

Select this component when circuit designs demand superior isolation between diodes to prevent RF coupling errors in differential applications. The SOT-363 package offers enhanced thermal conductivity compared to Alloy 42 leadframe packages, allowing for higher power dissipation capabilities. Verify that the 4V peak inverse voltage rating aligns with the maximum expected reverse bias conditions in the target system.

RF Diode Part Context

This part belongs to the HSMS-286x family of DC biased detector diodes designed for low-cost, high-volume production. The family includes various configurations such as single diodes, series pairs, and bridges. The HSMS-286K specifically addresses the need for matched diodes with improved isolation characteristics, derived from adjacent sites on the wafer to ensure performance consistency.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.