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HSMS-8101-BLKG is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 4V 75MW SOT23. Review the specifications below when checking this part for your BOM.
RF Diode specifications for HSMS-8101-BLKG
- Description：RF DIODE SCHOTTKY 4V 75MW SOT23
- Series：-
- Mfr：Broadcom Limited
- Package：Strip
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：4V
- Current - Max：-
- Capacitance @ Vr, F：0.26pF @ 0V, 1MHz
- Resistance @ If, F：14Ohm @ 5mA, 1MHz
- Power Dissipation (Max)：75 mW
- Operating Temperature：150°C (TJ)
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
RF Diode datasheet and documents for HSMS-8101-BLKG
RF Diode Overview
The HSMS-8101-BLKG is a surface-mount microwave Schottky mixer diode designed for X/Ku-band applications. It operates within a junction temperature range of -65°C to +150°C and withstands a peak inverse voltage of 4V with total device dissipation up to 75mW. Key electrical specifications include a breakdown voltage of 4V at 10µA reverse current, a total capacitance of 0.26pF at 0V/1MHz, and a dynamic resistance of 14Ω at 5mA forward current. The typical conversion loss is 6.3dB at 12GHz with 1mW local oscillator power.
RF Diode Feature Summary
- Optimized for use at 10-14 GHz
- Low Capacitance
- Low Conversion Loss
- Low RD
- Low Cost Surface Mount Plastic Package
- Lead-free
RF Diode Applications
- DBS downconverter applications
- VSAT downconverter applications
RF Diode Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging format. The BLKG suffix indicates bulk packaging. Confirm lead material and finish details match project requirements. Ensure ESD handling precautions are followed during assembly. Check for any RoHS compliance statements in the latest datasheet revision.
RF Diode Selection Notes
Select this component for high-frequency mixing tasks requiring low conversion loss and minimal capacitance. Consider the SOT-23 package dimensions for PCB layout constraints. Evaluate thermal management needs based on the 75mW dissipation rating. Compare performance metrics against alternative Schottky diodes if specific impedance matching is required.
RF Diode Part Context
This part belongs to a series of surface mount microwave Schottky mixer diodes including models like HSMS-8202, HSMS-8207, and HSMS-8209. These devices share similar structural characteristics but may vary in specific electrical parameters such as capacitance difference or dynamic resistance difference depending on the model variant.
RF Diode Replacement Considerations
Direct substitutes within the same family include HSMS-8202, HSMS-8207, and HSMS-8209. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure the replacement part meets the same frequency and power handling requirements.
RF Diode FAQ
What is the typical conversion loss at 12 GHz?
The typical conversion loss is 6.3 dB at 12 GHz with 1 mW local oscillator power.
What is the maximum operating junction temperature?
The maximum junction temperature is +150°C.
What package options are available for this device?
The device is available in standard SOT-23 and SOT-143 package configurations.
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