HT8KC5TB1

FET, MOSFET Arrays Overview

The HT8KC5TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an HSMT-8 surface-mount package. It features a drain-source voltage (Vdss) rating of 60 V and a continuous drain current (Id) of 10 A. The device exhibits a typical on-resistance (Rds(on)) of 90 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 3.1 nC. Power dissipation is rated at 13 W, with an operating temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact HSMT-8 package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient switching performance.
• High thermal stability supporting operation up to 150°C junction temperature.

FET, MOSFET Arrays Applications

• General purpose switching applications
• Motor driver circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements if mandated by the project standards. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a small footprint. Ensure the application voltage does not exceed the 60 V drain-source limit. Verify that the gate drive voltage aligns with the specified Rds(on) test conditions for optimal efficiency. Consider the 13 W power dissipation capability relative to the PCB thermal design constraints.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's HSMT series of high-power small mold packages. It serves as a dual-channel solution, integrating two N-channel MOSFETs into a single 8-terminal package. This integration reduces board space compared to discrete components while maintaining robust electrical performance for standard switching frequencies.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 60 V/10 A rating, HSMT-8 package, and dual N-channel configuration. Verify pinout compatibility and thermal resistance values. Consult the manufacturer's cross-reference list for officially validated alternatives.