HUF75229P3

Description：MOSFET N-CH 50V 44A TO220-3
Series：UltraFET™
Mfr：onsemi
Package：Tube

SKU:86a3151041a7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

HUF75229P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 50V 44A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF75229P3

Description：MOSFET N-CH 50V 44A TO220-3
Series：UltraFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：22mOhm @ 44A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1060 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for HUF75229P3

HUF75229P3

Single FETs, MOSFETs Overview

The HUF75229P3 is a single N-Channel UltraFET Power MOSFET manufactured using an advanced process technology designed to achieve the lowest possible on-resistance per silicon area. It features a Drain-to-Source Voltage (VDSS) of 50V and a continuous Drain Current (ID) of 44A at 25°C case temperature. The device exhibits a maximum Drain-to-Source On-Resistance (rDS(ON)) of 0.022Ω at VGS=10V and ID=44A. It operates within a junction temperature range of -55°C to +175°C, with a thermal resistance from Junction-to-Case (RθJC) of 1.66°C/W. The component is housed in a JEDEC TO-220AB package.

Single FETs, MOSFETs Feature Summary

Utilizes UltraFET process technology for optimized on-resistance performance
Capable of withstanding high energy in avalanche mode
Features low reverse recovery time and stored charge in the body diode

Single FETs, MOSFETs Applications

Switching regulators
Motor drivers
Relay drivers
Low-voltage bus switches
Power management in portable products

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities, as the datasheet indicates copyright by Fairchild Semiconductor Corporation. Confirm that the specific part number matches the TO-220AB packaging and UltraFET specifications provided in the official documentation. Ensure compliance with the absolute maximum ratings listed in the datasheet during integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust switching performance with low conduction losses in low-voltage environments. The TO-220AB package facilitates effective heat dissipation for applications handling up to 44A. Consider the thermal impedance characteristics and the availability of PSPICE models for accurate circuit simulation before finalizing the design.

Single FETs, MOSFETs Part Context

This device belongs to the UltraFET series of power MOSFETs, engineered for high efficiency. The product line focuses on minimizing silicon area resistance while maintaining reliability under high-energy stress conditions. It represents a standard discrete solution for general-purpose power switching tasks in industrial and consumer electronics.