Single FETs, MOSFETs HUF76639P3 product image

HUF76639P3

$0.99
  • Description:MOSFET N-CH 100V 51A TO220-3
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube

SKU:c085574e5657 Category: Brand:

  
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HUF76639P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 51A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for HUF76639P3

  • Description:MOSFET N-CH 100V 51A TO220-3
  • Series:UltraFET™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:26mOhm @ 51A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for HUF76639P3

HUF76639P3

Single FETs, MOSFETs Overview

The HUF76639P3 is a single N-channel logic level UltraFET power MOSFET manufactured by Fairchild Semiconductor. It features a JEDEC TO-220AB package with a drain-to-source voltage rating of 100V and a continuous drain current capacity of 50A at 25°C case temperature. The device exhibits an ultra-low on-resistance of 0.027Ω at VGS=5V and 0.026Ω at VGS=10V. It supports a junction temperature range from -55°C to +175°C, includes unclamped inductive switching (UIS) capability, and provides temperature-compensated PSPICE and SABER simulation models for design verification.

Single FETs, MOSFETs Feature Summary

  • Logic-level gate drive enabling efficient control with low gate voltages
  • Ultra-low on-resistance for minimized conduction losses
  • Robust unclamped inductive switching (UIS) performance ratings
  • Comprehensive thermal and electrical simulation model availability

Single FETs, MOSFETs Applications

  • High-efficiency DC-DC converter designs
  • Motor control circuitry requiring fast switching
  • Power management systems utilizing logic-level inputs

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to the product's obsolete status. Confirm that the specific ordering suffix matches the required package variant, as the datasheet indicates distinct packaging options exist within this family. Ensure all handling procedures comply with the manufacturer's quality system certifications referenced in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling with low conduction losses under logic-level drive conditions. Evaluate the thermal resistance characteristics against the expected ambient operating environment. Consider the UIS rating limits if the application involves inductive load switching without external snubbing protection.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET series of power MOSFETs designed for high-performance switching applications. It represents a legacy product line originally developed by Fairchild Semiconductor before corporate restructuring. The TO-220AB package facilitates through-hole mounting and effective heat dissipation via the drain flange connection.

Single FETs, MOSFETs Replacement Considerations

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