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HUFA75329D3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 55V 20A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for HUFA75329D3
- Description：MOSFET N-CH 55V 20A IPAK
- Series：UltraFET™
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65 nC @ 20 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1060 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：128W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for HUFA75329D3
Single FETs, MOSFETs Overview
The HUFA75329D3 is an N-Channel UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features a 55V drain-source voltage rating and a continuous drain current of 49A. The device utilizes the UltraFET process to achieve a low on-resistance of 0.024 ohms at 10V gate drive. Designed for high power efficiency, it withstands high energy in avalanche mode and exhibits low reverse recovery time and stored charge in its body diode.
Single FETs, MOSFETs Feature Summary
- Ultra Low On-Resistance
- High Avalanche Energy Capability
- Low Reverse Recovery Time
Single FETs, MOSFETs Applications
- Switching regulators
- Motor drivers
- Relay drivers
- Power management in portable products
Single FETs, MOSFETs Procurement Notes
Verify the exact suffix against official documentation, as variations like G3 or ST may indicate different packaging or RoHS compliance status. Confirm lead times and availability directly with authorized distributors, as stock levels fluctuate. Ensure the component matches the required thermal and electrical specifications for the target application before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling at low voltages with minimal conduction losses. The UltraFET technology ensures superior performance compared to standard MOSFETs. Consider thermal management requirements due to the high current capacity. Verify compatibility with existing gate drive circuits given the specific threshold and charge characteristics.
Single FETs, MOSFETs Part Context
This part belongs to the UltraFET family from Fairchild Semiconductor, designed for power efficiency. It is related to other models such as HUF75329G3 and HRZ44N. The series is known for achieving the lowest possible on-resistance per silicon area, making it suitable for demanding power conversion tasks.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes like HUF75329G3 or similar N-channel MOSFETs with matching 55V/49A ratings. Ensure replacement parts have comparable Rds(on) and thermal characteristics. Verify package compatibility if switching between through-hole and surface-mount variants.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
