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HUFA75329S3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 55V 49A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for HUFA75329S3ST
- Description：MOSFET N-CH 55V 49A D2PAK
- Series：UltraFET™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 49A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 20 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1060 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：128W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for HUFA75329S3ST
Single FETs, MOSFETs Overview
The HUFA75329S3ST is an N-Channel UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features a 55V drain-source breakdown voltage and a continuous drain current of 49A. The device exhibits a typical on-resistance of 0.024 ohms. It utilizes the UltraFET process for optimized performance, including low reverse recovery time and high avalanche energy capability. The component is housed in a surface-mount package suitable for power management applications.
Single FETs, MOSFETs Feature Summary
- Utilizes innovative UltraFET process technology to achieve low on-resistance per silicon area
- Capable of withstanding high energy in avalanche mode
- Exhibits very low reverse recovery time and stored charge in the built-in diode
Single FETs, MOSFETs Applications
- Switching regulators
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management in portable products
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'ST' against official datasheets to confirm tape-and-reel packaging details. Confirm RoHS compliance status through manufacturer documentation. Check for obsolescence notices as Fairchild Semiconductor assets have transitioned. Ensure the source document explicitly lists this exact part number to avoid confusion with similar variants like HUFA75329S3S.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 55V operation with high current handling up to 49A. The low on-resistance makes it suitable for efficiency-critical switching applications. Verify thermal requirements match the package capabilities. Consider the avalanche rating if inductive load switching is present. Compare gate charge specifications against driver capabilities for optimal switching speed.
Single FETs, MOSFETs Part Context
This part belongs to the UltraFET Power MOSFET family from Fairchild Semiconductor. These devices are designed for general-purpose power switching where efficiency and ruggedness are priorities. The family typically includes various voltage and current ratings sharing the same advanced fabrication process technology for consistent performance characteristics across the series.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with HUF75329S3S or HUF75329D3S for pin-compatible alternatives within the same product line. Verify that substitute parts maintain the 55V rating and comparable on-resistance values. Ensure the replacement supports the required current handling and thermal dissipation for the specific application environment.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
