HUFA75852G3

Single FETs, MOSFETs Overview

The HUFA75852G3 is a single N-Channel UltraFET Power MOSFET manufactured by onsemi. It features a TO-247 package with a drain current of 75 A and a drain-to-source voltage rating of 150 V. The device exhibits an ultra-low on-resistance of 0.016 Ω at a gate-to-source voltage of 10 V. Designed for automotive environments, it meets AEC Q101 standards. Key electrical parameters include a maximum power dissipation of 500 W, a junction temperature range from -55 °C to 175 °C, and a thermal resistance junction-to-case of 0.30 °C/W.

Single FETs, MOSFETs Feature Summary

• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve

Single FETs, MOSFETs Applications

• Automotive industry applications requiring extreme test conditions
• Power switching circuits utilizing unclamped inductive switching capability
• High-current DC-DC conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the component status as obsolete or discontinued before procurement planning. Confirm that the datasheet reflects final specifications or preliminary data depending on the revision date. Ensure compatibility with existing PCB footprints for the TO-247 package. Check for any specific quality certifications required for your application environment.

Single FETs, MOSFETs Selection Notes

Select this component when high continuous drain current and low conduction losses are critical. The TO-247 package provides robust thermal performance suitable for high-power dissipation scenarios. Consider the 150 V breakdown voltage for medium-voltage applications. Evaluate the UIS rating if the circuit involves inductive load switching without clamping protection.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET Power MOSFET family, originally developed by Fairchild Semiconductor and now managed by onsemi following acquisition. The product line emphasizes low on-resistance and high reliability for demanding power electronics applications. The HUFA75852G3 specifically targets automotive and industrial sectors requiring durable semiconductor solutions.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-reference part numbers from onsemi or other manufacturers offering identical pinouts and electrical characteristics. Verify that any substitute matches the TO-247 package dimensions and thermal properties. Ensure the replacement meets the same AEC Q101 automotive qualification standards if used in automotive contexts.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the HUFA75852G3?

The maximum continuous drain current is 75 A at a case temperature of 25 °C.

Does the HUFA75852G3 meet automotive reliability standards?

Yes, the product is designed to meet the extreme test conditions and environment demanded by the automotive industry, specifically complying with AEC Q101 standards.

What simulation models are available for this component?

Temperature compensated PSPICE and SABER electrical models, along with Spice and SABER thermal impedance models, are provided for simulation purposes.