FET, MOSFET Arrays HUFA76413DK8T-F085P product image

HUFA76413DK8T-F085P

  • Description:MOSFET 2N-CH 60V 5.1A 8SOIC
  • Series:-

SKU:7430f5d43838 Category: Brand:

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HUFA76413DK8T-F085P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 60V 5.1A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for HUFA76413DK8T-F085P

  • Description:MOSFET 2N-CH 60V 5.1A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
  • Rds On (Max) @ Id, Vgs:49mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:620pF @ 25V
  • Power - Max:2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for HUFA76413DK8T-F085P

HUFA76413DK8T-F085P

FET, MOSFET Arrays Overview

The HUFA76413DK8T-F085P is a dual N-channel MOSFET from onsemi's UltraFET series, designed for high-efficiency switching applications. It features an automotive-grade qualification under AEC-Q101 standards and supports a maximum junction temperature of 150°C. The device utilizes an 8-SOIC surface-mount package with a width of 3.90mm. Power dissipation is rated at 2.5W, and it is supplied in reel packaging.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within the UltraFET series for efficient switching
  • Automotive-grade reliability certified to AEC-Q101 standards
  • High thermal tolerance supporting a maximum junction temperature of 150°C

FET, MOSFET Arrays Applications

  • Automotive power switching circuits
  • High-efficiency DC-DC converter topologies
  • General-purpose low-voltage switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix F085P against official documentation to confirm exact tape-and-reel specifications and marking details. Ensure compatibility with standard 8-SOIC footprint requirements during PCB layout. Confirm that the AEC-Q101 qualification meets the specific grade requirements for the target automotive application environment.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with automotive reliability is required. The 150°C junction temperature rating provides robust thermal performance compared to standard industrial grades. The compact 8-SOIC package suits space-constrained designs. Verify that the 2.5W power dissipation limit aligns with the thermal management strategy of the final system.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's UltraFET series, which focuses on optimized power MOSFET technologies. The HUFA76413DK8T variant specifically targets automotive markets, ensuring durability under harsh operating conditions. The dual configuration allows for bridge or half-bridge implementations within a single small outline package.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

HUFA76413DK8T-F085PHUFA76413DK8T-F085P

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