HUFA76423D3S

Single FETs, MOSFETs Overview

The HUFA76423D3S is a single N-Channel Logic Level UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features a TO-252AA (DPAK) surface-mount package with a drain flange for thermal management. The device supports a drain-to-source voltage of 60V and a continuous drain current of 20A at 25°C case temperature. Key electrical characteristics include a maximum on-resistance of 0.037Ω at VGS=5V and 0.032Ω at VGS=10V. It operates within a junction temperature range of -55°C to +175°C and includes simulation models for PSPICE and SABER.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive capability enabling direct control from standard logic voltages such as 5V and 4.5V.
• Ultra-low on-resistance optimized for high efficiency power switching applications.
• Robust avalanche energy rating supporting unclamped inductive switching conditions.
• Comprehensive simulation models provided for accurate circuit design and thermal analysis.

Single FETs, MOSFETs Applications

• Automotive electronic systems requiring AEC Q101 compliance.
• DC-DC converter circuits utilizing low-side switching configurations.
• Motor control interfaces driving inductive loads.
• Power supply output stages requiring high current handling.

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to the product's discontinued status. Confirm that the specific ordering suffix matches the required tape and reel or tube packaging variant. Ensure compatibility with existing PCB footprints for the TO-252AA package. Review updated reliability data and material composition declarations before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-Channel MOSFET with low RDS(ON) is required for automotive or industrial environments. Consider the TO-252AA package for its balance of thermal performance and mounting convenience. Evaluate the gate charge specifications against available driver capabilities to ensure adequate switching speeds. Verify that the operating temperature range meets the specific environmental constraints of the target application.

Single FETs, MOSFETs Part Context

This part belongs to the UltraFET series of power MOSFETs designed for high-efficiency switching. Originally developed by Fairchild Semiconductor, the technology focuses on minimizing conduction losses while maintaining robust ruggedness. The product line targets demanding applications where thermal management and reliable operation under stress are critical requirements.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for compatible alternatives. Verify pinout compatibility and thermal resistance values when substituting. Ensure replacement devices meet the same voltage and current ratings. Check for equivalent switching characteristics and gate charge profiles to maintain circuit performance.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 20A at a case temperature of 25°C.

Does the device support unclamped inductive switching?

Yes, the datasheet provides specific UIS rating curves and test circuits for evaluating avalanche energy capability.

Are simulation models available for this component?

Yes, temperature-compensated PSPICE and SABER electrical and thermal models are provided in the datasheet.