ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
HUFA76639P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 100V 51A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for HUFA76639P3
- Description：MOSFET N-CH 100V 51A TO220-3
- Series：UltraFET™
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：180W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for HUFA76639P3
Single FETs, MOSFETs Overview
The HUFA76639P3 is an N-channel power MOSFET manufactured using the UltraFET process technology. It features a 100V drain-source voltage rating and a continuous drain current of 50A at 25°C. The device exhibits a maximum on-resistance of 26mΩ at 10V gate drive. It operates within a temperature range of -55°C to +175°C with a power dissipation capacity of 180W in a TO-220AB package.
Single FETs, MOSFETs Feature Summary
- Utilizes UltraFET process for low on-resistance per silicon area
- Capable of withstanding high energy in avalanche mode
- Features low reverse recovery time and stored charge in the diode
Single FETs, MOSFETs Applications
- Switching regulators
- Motor drivers
- Relay drivers
- Low-voltage bus switches
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as exemptions may apply. Check datasheet revisions for parameter updates. Ensure thermal management design aligns with specified power dissipation limits. Validate package dimensions against PCB footprint requirements before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust switching performance and high current handling capabilities. Consider the 100V rating for medium-voltage systems. Evaluate thermal resistance values for heat sink sizing. Compare on-resistance specifications against alternative devices for efficiency optimization. Verify gate drive voltage compatibility with control circuitry.
Single FETs, MOSFETs Part Context
This part belongs to the UltraFET family of power MOSFETs designed for high-efficiency power management. The series emphasizes low conduction losses and fast switching characteristics. It serves as a discrete solution for power conversion stages where reliability and thermal performance are critical. The TO-220AB package facilitates through-hole mounting for industrial applications.
Single FETs, MOSFETs Replacement Considerations
HUFA75639P3: Similar N-channel MOSFET but rated for 55V instead of 100V. Verify voltage headroom requirements before substitution. HUF75639P3: Newer generation equivalent with comparable electrical characteristics. Check pinout compatibility and thermal performance differences.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
