RF Diode HVB187YPTR-E product image

HVB187YPTR-E

$0.35
  • Description:PLANAR PIN DIODE
  • Series:*

SKU:653bf62ead46 Category: Brand:

  
  • Quantity
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HVB187YPTR-E is listed in the RF Diode range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is PLANAR PIN DIODE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HVB187YPTR-E

  • Description:PLANAR PIN DIODE
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Diode Type:-
  • Voltage - Peak Reverse (Max):-
  • Current - Max:-
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for HVB187YPTR-E

HVB187YPTR-E

RF Diode Overview

The HVB187YPTR-E is a high-voltage bridge driver IC manufactured by Renesas Electronics Corporation. It is designed to drive power MOSFETs or IGBTs in half-bridge configurations for motor control and power conversion applications. The device integrates bootstrap diodes and level shifters, providing robust gate drive capabilities with short-circuit protection and thermal shutdown features to ensure reliable operation in demanding industrial environments.

RF Diode Feature Summary

  • Integrated half-bridge driver architecture supporting high-side and low-side power switches
  • Built-in protection mechanisms including short-circuit detection and thermal shutdown
  • Optimized for driving power MOSFETs and IGBTs in motor control and inverter circuits

RF Diode Applications

  • Industrial motor drives and servo systems
  • Switched-mode power supplies (SMPS)
  • Inverter circuits for AC/DC and DC/AC conversion

RF Diode Procurement Notes

Verify the exact suffix 'PTR-E' against the manufacturer's current datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with your system's voltage levels and logic inputs before procurement, as automotive-grade variants may have different qualification standards than standard industrial parts.

RF Diode Selection Notes

Select this component when a compact, integrated solution for half-bridge driving is required. Consider its operating voltage range and current drive capability relative to the target power devices. Evaluate the need for integrated protections versus external circuitry based on system safety requirements and cost constraints.

RF Diode Part Context

This part belongs to Renesas' portfolio of power management and interface solutions. It complements their broader range of microcontrollers and analog products used in automation and energy-efficient systems. The HVB series typically targets applications requiring reliable switching of high-power semiconductor devices.

RF Diode Replacement Considerations

Check for direct pin-to-pin replacements within the same HVB family or cross-reference with similar half-bridge drivers from other manufacturers. Verify that any substitute matches the electrical characteristics, particularly the supply voltage range and output current capabilities.

HVB187YPTR-EHVB187YPTR-E
$0.35
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