HVD142AKRF-E

RF Diode Overview

The HVD142AKRF-E is a silicon epitaxial planar PIN diode manufactured by Renesas Electronics. Designed for antenna switching applications, it operates with a reverse voltage of 60 V and a forward current rating of 100 mA. The device features a low maximum capacitance of 0.35 pF and a maximum forward resistance of 1.5 Ω at 100 MHz. It utilizes an SOD-523 surface-mount package and supports a junction temperature up to 150 °C.

RF Diode Feature Summary

• Low capacitance design suitable for high-frequency signal paths
• Low forward resistance for efficient RF conduction
• Silicon epitaxial planar construction for reliability

RF Diode Applications

• Antenna switching circuits
• RF signal routing
• High-frequency switching applications

RF Diode Procurement Notes

Verify the specific suffix 'AKRF-E' against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS directives and check for any end-of-life notices or last-time-buy notifications before finalizing procurement plans.

RF Diode Selection Notes

Select this component when low capacitance and low forward resistance are critical for RF performance in antenna switching. Compare the 60 V reverse voltage and 100 mA forward current ratings against circuit requirements. Verify that the SOD-523 package dimensions fit the available PCB space.

RF Diode Part Context

This part belongs to the HVD series of PIN diodes from Renesas, which are specialized for RF switching. The series includes variants like HVD138 and HVD141, typically characterized by low capacitance and fast switching speeds for communication equipment.

RF Diode Replacement Considerations

The RN142SM is listed as a similar specification replacement for the RN142ZS8A, but direct substitution for the HVD142AKRF-E requires verifying pinout and electrical parameter equivalence with other 60V PIN diodes.