HVL355C1KRF-E

Overview

The HVL355C1KRF-E is a variable capacitance diode manufactured by Renesas Electronics Corporation. It is designed for applications requiring tunable reactive components, such as RF circuits and voltage-controlled oscillators. The device utilizes silicon technology and is compliant with RoHS standards. It is housed in an EFP-2 package, which provides a compact form factor suitable for surface-mount assembly. This component serves as a discrete semiconductor solution for adjusting circuit parameters through applied voltage.

Feature Summary

• Utilizes silicon-based construction for reliable variable capacitance performance
• RoHS compliant manufacturing process ensuring environmental safety
• Designed for surface-mount integration within compact electronic assemblies

Applications

• RF tuning circuits
• Voltage-controlled oscillator (VCO) implementations
• Frequency modulation modules

Procurement Notes

Verify the specific suffix 'EFP-2' to confirm the package type matches your PCB footprint requirements. Ensure that the RoHS compliance status aligns with your manufacturing regulations. Cross-reference the manufacturer part number with official Renesas documentation to confirm current production status and availability before finalizing procurement plans.

Selection Notes

Select this component when a discrete, silicon-based varactor diode is required for RF signal processing. Consider the EFP-2 package dimensions for layout constraints. Evaluate the electrical characteristics against the specific capacitance range needed for your target frequency application to ensure proper circuit functionality.

Part Context

This component belongs to the category of discrete semiconductor diodes, specifically variable capacitance devices. It is distinct from integrated circuits or power management solutions offered by the same manufacturer. Its primary function relies on the physical properties of the PN junction to vary capacitance with reverse bias voltage.