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The HVU200ATRU-E is a silicon variable capacitance diode designed for VHF band applications. It features a single configuration with a minimum breakdown voltage of 32V and a minimum diode capacitance ratio of 10. The component utilizes a plastic/epoxy small outline package (SOP) with two terminals, suitable for surface mount technology. Manufactured by Renesas Electronics Corporation, this device operates within the very high frequency range and is constructed from silicon material.
Verify RoHS compliance status as the base model is listed as non-compliant. Confirm the specific suffix meaning with the manufacturer, as ordering suffixes may indicate packaging or environmental variations. Ensure the supplier provides official datasheets matching the exact part number to confirm electrical parameters and package dimensions before procurement.
Select this component when a VHF band variable capacitance diode with a 32V minimum breakdown voltage is required. Consider the 10:1 minimum capacitance ratio for tuning range requirements. Verify that the small outline surface mount package fits the PCB layout constraints and that the silicon material properties align with the thermal and electrical design specifications.
This part belongs to the Renesas Electronics Corporation diode family, specifically categorized under variable capacitance diodes. It is distinct from the microcontroller and processor products also listed in the provided knowledge base, such as the RA6M5 or RZ/G2E series. The HVU200ATRU-E is a discrete semiconductor component rather than an integrated circuit system.
Check for direct substitutes with identical VHF specifications, 32V breakdown voltage, and SOP-2 package. Ensure any replacement maintains the same silicon material and capacitance ratio characteristics. Verify pin compatibility and thermal performance if substituting with components from other manufacturers.