FET, MOSFET Arrays IAUC60N04S6L030HATMA1 product image

IAUC60N04S6L030HATMA1

$0.84
  • Description:MOSFET 2N-CH 40V 60A 8TDSON
  • Series:OptiMOS™

SKU:0cc371447be1 Category: Brand:

  
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IAUC60N04S6L030HATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 60A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IAUC60N04S6L030HATMA1

  • Description:MOSFET 2N-CH 40V 60A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tj)
  • Rds On (Max) @ Id, Vgs:3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2128pF @ 25V
  • Power - Max:75W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PG-TDSON-8-56
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for IAUC60N04S6L030HATMA1

IAUC60N04S6L030HATMA1

FET, MOSFET Arrays Overview

The IAUC60N04S6L030H is an OptiMOS™-6 automotive power MOSFET featuring a PG-TDSON-8-56 package. It operates as a half-bridge N-channel enhancement mode device with a drain-source voltage of 40 V and a maximum on-state resistance of 3.0 mΩ at VGS=10V. The component supports a continuous drain current of 60 A, a pulsed drain current of 311 A, and a total power dissipation of 75 W at 25°C case temperature. It withstands junction temperatures up to 175°C and includes avalanche testing.

FET, MOSFET Arrays Feature Summary

  • OptiMOS™-6 technology designed for automotive applications
  • AEC-Q101 qualified with 100% avalanche testing
  • Logic level gate drive capability
  • Green product compliant with RoHS standards

FET, MOSFET Arrays Applications

  • Automotive power switching circuits
  • Half-bridge configurations
  • High-current motor control systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging details such as reel or cut tape specifications. Ensure the requested part number matches the exact thermal and electrical ratings required for the target application environment. Cross-reference datasheet revision history for any updates to maximum ratings or testing conditions before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing automotive systems requiring low conduction losses and high reliability under extreme thermal conditions. The logic-level gate drive simplifies driver circuit design compared to standard threshold devices. Consider the PG-TDSON-8-56 footprint constraints and verify PCB layout guidelines for optimal thermal performance and current handling capabilities in space-constrained modules.

FET, MOSFET Arrays Part Context

This transistor belongs to the OptiMOS™-6 family, representing advanced trench gate technology optimized for automotive durability. It provides improved figure-of-merit characteristics compared to previous generations, balancing low on-resistance with fast switching speeds. The series is engineered to meet stringent automotive quality standards while maintaining compact physical dimensions for modern electronic control units.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives within the OptiMOS™ portfolio. Verify pinout compatibility and thermal resistance values when considering cross-references from other manufacturers. Ensure any substitute meets the same AEC-Q101 qualification requirements and operating temperature range specifications.

IAUC60N04S6L030HATMA1IAUC60N04S6L030HATMA1
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