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IAUZ40N10S5L120ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(75V 120V( PG-TSDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUZ40N10S5L120ATMA1
- Description：MOSFET_(75V 120V( PG-TSDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs：22.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1589 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：62W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-33
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUZ40N10S5L120ATMA1
Single FETs, MOSFETs Overview
The IAUZ40N10S5L120ATMA1 is an OptiMOS™-5 N-channel enhancement mode power MOSFET designed for automotive applications. It features a PG-TSDSON-8-33 package and supports a maximum drain-source voltage of 100 V with a continuous drain current of 40 A at Tc=25 °C. The device exhibits a maximum on-state resistance of 12 mΩ at VGS=10 V and 18.5 mΩ at VGS=4.5 V. It operates within a temperature range of -55 °C to +175 °C, offers a thermal resistance junction-to-case of 2.4 K/W, and includes avalanche testing verification.
Single FETs, MOSFETs Feature Summary
- OptiMOS™-5 technology optimized for automotive environments
- Logic-level gate drive capability supporting low-voltage control
- High reliability verified through 100% avalanche testing
Single FETs, MOSFETs Applications
- Automotive power switching circuits
- Low-side load switching applications
- DC-DC converter stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details. Ensure that the component meets the required RoHS compliance standards and matches the specified PG-TSDSON-8-33 footprint for PCB integration. Cross-reference the datasheet revision to validate all electrical parameters before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-channel MOSFET with high current handling and logic-level compatibility is required for automotive systems. Consider the 12 mΩ on-resistance for efficiency targets and the 175 °C operating temperature for high-thermal environments. Evaluate the package size constraints against the available PG-TSDSON-8-33 footprint during the design phase.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™-5 family from Infineon Technologies, engineered specifically for demanding automotive conditions. The series integrates advanced silicon technologies to deliver superior performance in terms of conduction losses and switching speeds compared to previous generations.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
