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IAUZN04S7N049ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(20V 40V). Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IAUZN04S7N049ATMA1
- Description：MOSFET_(20V 40V)
- Series：OptiMOS™ 7
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 70A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：4.93mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：922 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-44
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IAUZN04S7N049ATMA1
Single FETs, MOSFETs Overview
The IAUZN04S7N049 is an OptiMOS™ 7 automotive power MOSFET featuring a 40 V drain-source breakdown voltage and a maximum on-state resistance of 4.93 mΩ at 10 V gate drive. It supports a continuous chip-limited drain current of 70 A and a pulsed current of 155 A. The device operates within a junction temperature range of -55°C to +175°C, utilizes a PG-TSDSON-8-44 package, and includes a total gate charge of 14 nC.
Single FETs, MOSFETs Feature Summary
- Optimized for high-efficiency switching in automotive environments using advanced trench technology
- Validated beyond standard requirements with 100% avalanche testing and enhanced electrical screening
- Designed for robust thermal management and reliable operation under extreme mechanical stress
Single FETs, MOSFETs Applications
- General automotive applications
- Automotive braking solutions
- Electric power steering systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification level for your target application before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring low conduction losses and high reliability in compact automotive layouts. Ensure the PCB footprint matches the PG-TSDSON-8-44 outline and verify that the driver can supply sufficient gate current to manage the specified switching times effectively.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 7 family, representing Infineon's latest generation of silicon power transistors designed specifically for demanding automotive electronics. It succeeds previous generations by offering improved figure-of-merit values and enhanced ruggedness within standardized surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for direct replacements. Verify pinout compatibility and ensure the substitute device meets or exceeds the 40 V rating and 4.93 mΩ Rds(on) specification.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
