IDH04G65C5XKSA2

$2.12

Description：DIODE SIL CARB 650V 4A PGTO2201
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Tube

SKU:6346b3c242da Category: Single Diodes Brand: Infineon Technologies

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Product introduction

IDH04G65C5XKSA2 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SIL CARB 650V 4A PGTO2201. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IDH04G65C5XKSA2

Description：DIODE SIL CARB 650V 4A PGTO2201
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：4A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 4 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：70 µA @ 650 V
Capacitance @ Vr, F：130pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-220-2
Supplier Device Package：PG-TO220-2-1
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for IDH04G65C5XKSA2

IDH04G65C5XKSA2

Single Diodes Overview

The IDH04G65C5XKSA2 is a Silicon Carbide Schottky diode from Infineon Technologies, part of the 5th Generation thinQ! family. It features a TO-220-2 package with a continuous forward current rating of 4 A at TC < 150°C and a repetitive peak reverse voltage of 650 V. The device exhibits a typical forward voltage of 1.5 V at 4 A (Tj=25°C) and a maximum surge non-repetitive forward current of 38 A. Key electrical parameters include a total capacitive charge of 7 nC and a power dissipation capacity of 48 W.

Single Diodes Feature Summary

Utilizes Silicon Carbide semiconductor material for benchmark switching behavior
Features no reverse recovery and no forward recovery characteristics
Demonstrates temperature independent switching behavior across operating ranges
Optimized for high temperature operation up to 175°C junction temperature

Single Diodes Applications

Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply

Single Diodes Procurement Notes

Verify component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm RoHS compliance status and lead-free plating requirements prior to integration. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under expected load conditions.

Single Diodes Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling requirements compared to silicon diodes. Consider the specific forward voltage characteristics at target junction temperatures to ensure system efficiency goals are met. Evaluate the surge current capability against potential transient loads in the circuit design.

Single Diodes Part Context

This component belongs to the 5th Generation thinQ! SiC Schottky Diode series, designed to complement 650V CoolMOS families. It utilizes proprietary diffusion soldering processes combined with thin-wafer technology to improve efficiency over all load conditions. The product line targets stringent application requirements within the 650V voltage range.