Single Diodes IDH10G65C5ZXKSA1 product image

IDH10G65C5ZXKSA1

  • Description:DIODE SIL CARB 650V 10A PGTO220
  • Series:CoolSiC™+
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:b18c3acaf1ed Category: Brand:

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IDH10G65C5ZXKSA1 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SIL CARB 650V 10A PGTO220. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IDH10G65C5ZXKSA1

  • Description:DIODE SIL CARB 650V 10A PGTO220
  • Series:CoolSiC™+
  • Mfr:Infineon Technologies
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):10A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:180 µA @ 650 V
  • Capacitance @ Vr, F:300pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:PG-TO220-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for IDH10G65C5ZXKSA1

IDH10G65C5ZXKSA1

Single Diodes Overview

The IDH10G65C5ZXKSA1 is a silicon carbide Schottky diode from Infineon Technologies, part of the thinQ! series. It features a TO-220-2 through-hole package and a single configuration. Key electrical parameters include a maximum repetitive reverse voltage (Vrrm) of 650 V and a forward current (If) of 10 A. The typical forward voltage (Vf) is 1.25 V at rated conditions, with a maximum reverse leakage current (Ir) of 1 uA. The device supports a continuous forward surge current (Ifsm) of 55 A and operates within a junction temperature range of -55 °C to +175 °C.

Single Diodes Feature Summary

  • Utilizes silicon carbide technology for high thermal stability
  • Features zero reverse recovery charge for reduced switching losses
  • Designed for high dV/dt ruggedness in demanding environments

Single Diodes Applications

  • LED lighting system design
  • Photovoltaic power conversion
  • Desktop power supplies

Single Diodes Procurement Notes

Verify the specific suffix ZKSA1 against official Infineon documentation to confirm pinout and marking variations. Confirm RoHS compliance status via the manufacturer's datasheet. Check for obsolescence notices as product lifecycles may change. Ensure the TO-220-2 package matches your PCB footprint requirements before finalizing procurement.

Single Diodes Selection Notes

Select this component for applications requiring low forward voltage drop and high efficiency at 650 V blocking levels. Compare the 10 A current rating against peak load requirements. Consider the TO-220-2 package for through-hole assembly needs. Evaluate thermal management capabilities based on the specified power dissipation limits and operating temperature range.

Single Diodes Part Context

This diode belongs to Infineon's CoolSiC and thinQ! portfolios, targeting high-efficiency power conversion. It complements superjunction MOSFET families by offering complementary switching characteristics. The silicon carbide material enables superior performance compared to traditional silicon rectifiers in high-frequency and high-temperature applications.

Single Diodes Replacement Considerations

Consult official substitution guides for equivalent 650 V SiC Schottky diodes in the TO-220-2 package. Verify that alternative parts match the 10 A forward current and 1.25 V forward voltage specifications. Ensure thermal and electrical parameters are compatible with the existing circuit design.

IDH10G65C5ZXKSA1IDH10G65C5ZXKSA1

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