IDL10G65C5XUMA2

Single Diodes Overview

The IDL10G65C5XUMA2 is a Silicon Carbide Schottky diode from Infineon's 5th Generation thinQ! family, designed for high-temperature and high-frequency applications. It features a 650 V DC blocking voltage and supports a continuous forward current of 10 A at case temperatures below 125°C. The device exhibits zero reverse recovery charge and negligible forward recovery. Key electrical parameters include a typical forward voltage of 1.5 V at 10 A (25°C) and a total capacitive charge of 15 nC at 400 V. It operates within a junction temperature range of -55°C to 150°C.

Single Diodes Feature Summary

• Utilizes Silicon Carbide semiconductor material for superior thermal performance and efficiency compared to silicon alternatives.
• Features benchmark switching behavior with no reverse recovery or forward recovery effects.
• Demonstrates temperature-independent switching characteristics across the operating range.
• Incorporates proprietary diffusion soldering and thin-wafer technology for compact design.

Single Diodes Applications

• Switch mode power supplies
• Power factor correction circuits
• Solar inverters
• Uninterruptible power supplies

Single Diodes Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number IDL10G65C5XUMA2 with official Infineon documentation. Confirm package type PG-VSON-4 and marking D1065C5 match physical inspection. Ensure compliance with RoHS standards and JEDEC qualification requirements relevant to the target application environment before finalizing procurement orders.

Single Diodes Selection Notes

Select this component for designs requiring high-frequency operation and reduced cooling system size due to improved thermal characteristics. Consider the low figure of merit resulting from optimized Qc and Vf values for enhanced system efficiency. Evaluate the surge current capability and dv/dt ruggedness against specific circuit stress conditions to ensure reliable performance under transient loads.

Single Diodes Part Context

This device belongs to the 5th Generation thinQ! SiC Schottky Diode family, representing Infineon's leading-edge technology in wide-bandgap semiconductors. It complements the 650V CoolMOS™ families, ensuring compatibility with stringent application requirements in the same voltage range. The product utilizes a new compact design combined with thin-wafer technology to deliver improved efficiency over all load conditions.

Single Diodes Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers within the IDLxxG65C5 series or other compatible SiC diode families. Do not assume functional equivalence with generic silicon rectifiers without verifying thermal and electrical parameter alignment.

Single Diodes FAQ

What is the maximum non-repetitive surge forward current?

The maximum non-repetitive surge forward current is 50 A at a case temperature of 25°C for a pulse duration of 10 ms.

How does the forward voltage vary with temperature?

The typical forward voltage is 1.5 V at 10 A and 25°C, increasing to 1.8 V at 10 A and 150°C.

What is the specified thermal resistance from junction to case?

The typical thermal resistance from junction to case (RthJC) is 0.8 K/W, with a maximum of 1.1 K/W.