IDW80C65D1XKSA1

Diode Arrays Overview

The IDW80C65D1XKSA1 is a Rapid Switching Emitter Controlled Diode from Infineon's Common Cathode Series. It features a 650 V repetitive peak reverse voltage and two independent legs, each rated for an 80 A forward current at 25°C case temperature. The device utilizes Emitter Controlled technology to achieve low forward voltage (1.35 V typical) and ultra-fast recovery characteristics. Key dynamic parameters include a reverse recovery charge of 0.87 µC and a peak reverse recovery current of 17.5 A under standard test conditions. It operates within a junction temperature range of -40 °C to 175 °C and is housed in a PG-TO247-3 package.

Diode Arrays Feature Summary

• Utilizes 650V Emitter Controlled technology for stable parameter behavior across temperatures.
• Features ultra-fast recovery with low reverse recovery charge and current.
• Designed for high reliability with qualified performance according to JEDEC standards.
• Offers low forward voltage to minimize conduction losses.

Diode Arrays Applications

• AC/DC converters
• Boost diode in PFC stages
• Free wheeling diodes in inverters and motor drives
• General purpose inverters
• Switch mode power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the component meets all environmental requirements such as RoHS compliance and lead-free plating specifications required for the target assembly process. Cross-reference the datasheet revision history to confirm the document version matches the production batch quality.

Diode Arrays Selection Notes

Select this component when designing circuits requiring common cathode configurations with high surge current capabilities. The dual-leg structure allows for efficient use in bridge rectifiers or half-bridge topologies. Consider the thermal resistance values and derating curves to ensure the junction temperature remains within the 175 °C limit during continuous operation. Evaluate the switching speed requirements against the reverse recovery characteristics to optimize system efficiency.

Diode Arrays Part Context

This part belongs to the Emitter Controlled Diode Rapid 1 Common Cathode Series by Infineon Technologies. It is designed for industrial power control applications where robust switching performance and thermal stability are critical. The series integrates advanced silicon technology to deliver high current handling capabilities in a through-hole package suitable for high-power density designs.

Diode Arrays Replacement Considerations

Consult the Infineon selection guide for Rapid 1 and Rapid 2 Diodes to identify equivalent parts with similar voltage and current ratings. Verify pin compatibility and thermal characteristics before substituting. Official cross-references should be confirmed via manufacturer documentation.

Diode Arrays FAQ

What is the maximum non-repetitive surge forward current?

The maximum non-repetitive forward surge current (IFSM) is 320 A for a duration of 10 ms at a sine half-wave frequency, measured at a case temperature of 25°C.

How is the internal emitter inductance specified?

The internal emitter inductance (LE) is typically 13 nH, measured 5 mm from the case.

What is the recommended operating condition for optimum lifetime?

Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in the datasheet to ensure optimum lifetime and reliability.